Abstract:Cu2In x Zn1-x SnS4 (x = 0.4) alloy thin films were synthesized on soda lime glass (SLG) substrate by a simple low-cost sol-gel method followed by a rapid annealing technique. The influence of sulfurization temperature and sulfurization time on the structure, morphology, optical and electrical properties of Cu2In x Zn1-x SnS4 thin films was investigated in detail. The XRD and Raman results indicated that the crystalline quality of the Cu2In x Zn1-x SnS4 alloy thin films was improved, accompanied by metal deficiency, particularly tin loss with increasing the sulfurization temperature and sulfurization time. From absorption spectra it is found that the band gaps of all Cu2In x Zn1-x SnS4 films are smaller than that (1.5 eV) of the pure CZTS film due to In doping, and the band gap of the Cu2In x Zn1-x SnS4 films can be tuned in the range of 1.38 to 1.19 eV by adjusting the sulfurization temperature and sulfurization time. Hall measurement results showed that all Cu2In x Zn1-x SnS4 alloy thin films showed p-type conductivity characteristics, the hole concentration decreased and the mobility increased with the increase of sulfurization temperature and sulfurization time, which is attributed to the improvement of the crystalline quality and the reduction of grain boundaries. Finally, the Cu2In x Zn1-x SnS4 film possessing the best p-type conductivity with a hole concentration of 9.06 × 1016 cm-3 and a mobility of 3.35 cm2 V-1 s-1 was obtained at optimized sulfurization condition of 580 °C for 60 min. The solar cell using Cu2In x Zn1-x SnS4 as the absorber obtained at the optimized sulfurization conditions of 580 °C for 60 min demonstrates a power conversion efficiency of 2.89%. We observed an increment in open circuit voltage by 90 mV. This work shows the promising role of In in overcoming the low V oc issue in Cu-kesterite thin film solar cells.

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