Novel Hexameric Tin Carboxylate Clusters as Efficient Negative-Tone EUV Photoresists: High Resolution with Well-Defined Patterns under Low Energy Doses

Ting-An Lin,Yan-Ru Wu,Po-Hsiung Chen,Tsi-Sheng Gau,Burn-Jeng Lin,Rai-Shung Liu,Jia-Rong WU,Po Wen Chiu
DOI: https://doi.org/10.1039/d3na00131h
IF: 5.598
2023-04-29
Nanoscale Advances
Abstract:Synthesis of two novel tin carboxylate clusters (RSn)6(R'CO2)8O4Cl2 is described, and their structures have been characterized by X-ray diffraction. These clusters have irregular ladder geometry to form very smooth films with small surface roughness (RMS < 0.7 nm) over a large domain. EUV lithography can be used to resolve half pitches (HP) in the order of 15-16 nm with line width roughness (LWR = 4.5-6.0 nm) using small doses (20-90 mJ/cm2). Cluster 1 (R = n-butyl; R'CO2 = 2-methyl-3-butenoate) contains only radical precursor and cluster 2 (R = vinyl, R'CO2 = 2-methylbutyrate) bears both radical precursor and acceptor; the latter is much better than the former in EUV and e-beam photosensitivity. For these clusters, the mechanisms of EUV irradiation have been elucidated with high resolution X-ray photoelectron spectroscopy (HRXPS) and reflective Fourier-transform infrared spectroscopy (FTIR). At low EUV doses, two clusters undergo a Sn-Cl bond cleavage together with a typical decarboxylation to generate carbon radicals. The n-butyl groups of cluster 1 are prone to cleavage whereas the vinyl-Sn bonds of species 2 are inert toward EUV irradiation; participation of radical polymerization is evident for the latter.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
What problem does this paper attempt to address?