Enhancement of photosensitivity and stability of Sn-12 EUV resist by integrating photoactive nitrate anion

Yeo Kyung Kang,Heeju Kim,Sun Jin Lee,Dong-Seok Oh,Yang-Hun Yoon,Chang-Jun Kim,Geun Young Yeom,Chan-Cuk Hwang,Myung-Gil Kim
DOI: https://doi.org/10.1016/j.apsusc.2024.159564
IF: 6.7
2024-02-23
Applied Surface Science
Abstract:The semiconductor industry is currently transitioning to advanced extreme-ultraviolet lithography (EUVL) to address the challenges facing the use of photolithography in microprocessor and memory chip integration. This shift has sparked a surge in novel inorganic EUV photoresist research. However, several technical issues, such as insufficient EUV sensitivity, poor understanding of the photochemistry, and poor stability, have emerged. Here, the EUV sensitivity and stability of state-of-the-art tin oxo clusters are enhanced by integration with the photoactive nitrate anion to give [(BuSn) 12 O 14 (OH) 6 ](NO 3 ) 2 (TinNO 3 ). The findings of the study reveal that nitrate anions in TinNO 3 showing the photosensitivity as low as 32 mJ/cm 2 and maintaining stability irrespective of the post-exposure environment. Furthermore, TinNO 3 possesses superior resistance to dry etching, enabling selective etching of Si and the amorphous carbon layer. Finally, through intensive optimization of the post-exposure bake parameters, photoresist-substrate adhesion, and development conditions, well-ordered CD 45 nm L/S patterns of TinNO 3 thin-film were achieved using ArF lithography.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
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