Abstract:The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (Tg) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl]]-α,α-dimethylbenzylphenol, have demonstrated feature sizes as small as 50mn. Similarly, negative-tone images made using spiro-based compounds showed feature size as small as 60nm in lines/space patterns using e-beam lithography. Most recently we have demonstrated that fully and partially tert-butoxycarbonyl (t-Boc) protected calix[4]resorcinarene derivatives can be successfully studied as a positive-tone resist using EUV and E-beam lithography. Resolution as low as 35nm was obtained by EUV exposure.

Photoresist Fabrication for High-NA EUV Lithography: Material and Mechanism

Highly Sensitive Cationic Photoresist for High-Throughput Two-Photon Nanofabrication

Photoresist for Extreme Ultraviolet Lithography

Click chemistry assisted organic-inorganic hybrid photoresist for ultra-fast two-photon lithography

Advanced lithography materials: From fundamentals to applications

Design strategy of extreme ultraviolet resists

Trends in photoresist materials for extreme ultraviolet lithography: A review

Dip-In Photoresist for Photoinhibited Two-Photon Lithography to Realize High-Precision Direct Laser Writing on Wafer.

Resist Materials for Extreme Ultraviolet Lithography: Toward Low‐Cost Single‐Digit‐Nanometer Patterning

Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography

Understanding Etch Properties of Advanced Chemically Amplified EUV Resist

High-NA EUV lithography: current status and outlook for the future

Emerging trends in the chemistry of polymeric resists for extreme ultraviolet lithography

Single‐Component High‐Resolution Dual‐Tone EUV Photoresists Based on Precision Self‐Immolative Polymers

Materials for Future Lithography (invited Paper)

Resistless EUV lithography: photon-induced oxide patterning on silicon

Tin-oxo nanoclusters for extreme ultraviolet photoresists: Effects of ligands, counterions, and doping

Stochastic simulation and calibration of organometallic photoresists for extreme ultraviolet lithography

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Optimization of Fullerene-Based Negative Tone Chemically Amplified Fullerene Resist for Extreme Ultraviolet Lithography

Fundamentals of the reaction-diffusion process in model EUV photoresists