Abstract:"Tin-oxo cage" organometallic compounds are considered as photoresists for extreme ultraviolet (EUV) photolithography. To gain insight into their electronic structure and reactivity to ionizing radiation, we trapped bare gas-phase n-butyltin oxo cage dications [(BuSn)12O14(OH)6]2+ in an ion trap and investigated their fragmentation upon soft X-ray photoabsorption by means of mass spectrometry. In complementary experiments, the tin-oxo cages with hydroxide and trifluoroacetate counter-anions were cast in thin films and studied using X-ray transmission spectroscopy. Quantum-chemical calculations were used to interpret the observed spectra. At the carbon K-edge, a distinct pre-edge absorption band can be attributed to transitions in which electrons are promoted from C1s orbitals to the lowest unoccupied molecular orbitals, which are delocalized orbitals with strong antibonding (Sn−C σ*) character. At higher energies, the most prominent resonant transitions involve C‒C and C‒H σ* valence states and Rydberg (3s and 3p) states. In the solid state, the onset of continuum ionization is shifted by ~5 eV to lower energy with respect to the gas phase, due to the electrostatic effect of the counterions. The O K-edge also shows a pre-edge absorption, but it is devoid of any specific features, because there are many transitions from the different O1s orbitals to a large number of vacant orbitals. In the gas phase, formation of the parent [(BuSn)12O14(OH)6]3+ radical ion is not observed at the C K-edge nor at the O K-edge, because the loss of a butyl group from this species is very efficient. We do observe a number of triply charged photofragment ions, some of which have lost up to 5 butyl groups. Structures of these species are proposed based on quantum-chemical calculations, and pathways of formation are discussed. Our results provide insight into the electronic structure of alkyltin-oxo cages, which is a prerequisite for understanding their response to EUV photons and their performance as EUV photoresists.

Insight into the evolution upon ionization from tin-oxo cage photoresist and counterions by DFT calculation

Tin-oxo nanoclusters for extreme ultraviolet photoresists: Effects of ligands, counterions, and doping

Extreme Ultraviolet Photoresponse of Organotin-Based Photoresists with Borate Counteranions

Soft X-Ray Absorption and Fragmentation of Tin-oxo Cage Photoresists

UV and VUV-induced fragmentation of tin-oxo cage ions

Highly Sensitive Cationic Photoresist for High-Throughput Two-Photon Nanofabrication

Extreme ultraviolet photoemission of a tin-based photoresist

Enhancement of photosensitivity and stability of Sn-12 EUV resist by integrating photoactive nitrate anion

Novel Hexameric Tin Carboxylate Clusters as Efficient Negative-Tone EUV Photoresists: High Resolution with Well-Defined Patterns under Low Energy Doses

Improving the Lithography Sensitivity of Atomically Precise Tin‐Oxo Nanoclusters via Heterometal Strategy

XUV Absorption Spectroscopy and Photoconversion of a Tin-Oxo Cage Photoresist

Accurate and efficient evaluation of the ionization potentials of extreme ultraviolet photoresists using density functionals and semi-empirical methods

Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography

Solubility Change Behavior of Fluoroalkyl Ether-Tagged Dendritic Hexaphenol under Extreme UV Exposure

Study on resist performance of inorganic-organic resist materials for EUV and EB lithography

Characterization of carbon contamination under ion and hot atom bombardment in a tin-plasma extreme ultraviolet light source

Dissociative photoionization of EUV lithography photoresist models

Multinuclear Tin-Based Macrocyclic Organometallic Resist for EUV Photolithography

Elastic scattering cross sections and transport of tin ions in extreme ultraviolet lithography sources

Dissociative photoionization of phenyl triflate, a photoacid generator for photolithography, at 92 eV

Electronic Structure and Optical Properties of Tin Iodide Solution Complexes