Abstract:We report on the near edge X-ray absorption fine structure (NEXAFS) spectroscopy of hybrid organic-inorganic resists. These materials are nonchemically amplified systems based on Si, Zr, and Ti oxides, synthesized from organically modified precursors and transition metal alkoxides by a sol-gel route and designed for ultraviolet, extreme ultraviolet and electron beam lithography. The experiments were conducted using a scanning transmission X-ray microscope (STXM) which combines high spatial-resolution microscopy and NEXAFS spectroscopy. The absorption spectra were collected in the proximity of the carbon edge (~ 290 eV) before and after in situ exposure, enabling the measurement of a significant photo-induced degradation of the organic group (phenyl or methyl methacrylate, respectively), the degree of which depends on the configuration of the ligand. Photo-induced degradation was more efficient in the resist synthesized with pendant phenyl substituents than it was in the case of systems based on bridging phenyl groups. The degradation of the methyl methacrylate group was relatively efficient, with about half of the initial ligands dissociated upon exposure. Our data reveal that the such dissociation can produce different outcomes, depending on the structural configuration. While all the organic groups were expected to detach and desorb from the resist in their entirety, a sizeable amount of them remain and form undesired byproducts such as alkene chains. In the framework of the materials synthesis and engineering through specific building blocks, these results provide a deeper insight into the photochemistry of resists, in particular for extreme ultraviolet lithography.

Solubility Change Behavior of Fluoroalkyl Ether-Tagged Dendritic Hexaphenol under Extreme UV Exposure

Highly Sensitive Cationic Photoresist for High-Throughput Two-Photon Nanofabrication

Synthesis of End-Cap Enabled Self-Immolative Photoresists For Extreme Ultraviolet Lithography

Fluorescent Labeling to Investigate Nanopatterning Processes in Extreme Ultraviolet Lithography.

Highly Hydroxylated Hafnium Clusters Are Accessible to High Resolution EUV Photoresists under Small Energy Doses

Layer-Ordered Organooxotin Clusters for Extreme-Ultraviolet Photolithography

Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

Materials for Future Lithography (invited Paper)

Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography

CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Photoresist for Extreme Ultraviolet Lithography

Nonchemically Amplified Molecular Resists Based on Sulfonium-Functionalized Sulfone Derivatives for Sub-13 nm Nanolithography

Silicon Containing Organic-Inorganic Hybrid Materials As Euv Photoresists

Emerging trends in the chemistry of polymeric resists for extreme ultraviolet lithography

Tin-oxo nanoclusters for extreme ultraviolet photoresists: Effects of ligands, counterions, and doping

Fundamentals of the reaction-diffusion process in model EUV photoresists

Changes in the near edge X-ray absorption fine structure of hybrid organic-inorganic resists upon exposure

Inorganic Polymer Resists for EUVL

Extreme ultra-violet resists development concepts and performances

Single‐Component High‐Resolution Dual‐Tone EUV Photoresists Based on Precision Self‐Immolative Polymers

Resistless EUV lithography: photon-induced oxide patterning on silicon