Abstract:The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (Tg) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl]]-α,α-dimethylbenzylphenol, have demonstrated feature sizes as small as 50mn. Similarly, negative-tone images made using spiro-based compounds showed feature size as small as 60nm in lines/space patterns using e-beam lithography. Most recently we have demonstrated that fully and partially tert-butoxycarbonyl (t-Boc) protected calix[4]resorcinarene derivatives can be successfully studied as a positive-tone resist using EUV and E-beam lithography. Resolution as low as 35nm was obtained by EUV exposure.

Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography

Molecular Glass Resists for Next Generation Lithography

Click chemistry assisted organic-inorganic hybrid photoresist for ultra-fast two-photon lithography

Materials for Future Lithography (invited Paper)

Highly Sensitive Cationic Photoresist for High-Throughput Two-Photon Nanofabrication

Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

Resist Materials for Extreme Ultraviolet Lithography: Toward Low‐Cost Single‐Digit‐Nanometer Patterning

Optimization of Fullerene-Based Negative Tone Chemically Amplified Fullerene Resist for Extreme Ultraviolet Lithography

Emerging trends in the chemistry of polymeric resists for extreme ultraviolet lithography

Photoresist for Extreme Ultraviolet Lithography

Phenolic Molecular Glasses As Resists for Next-Generation Lithography

Resistless EUV lithography: photon-induced oxide patterning on silicon

Trends in photoresist materials for extreme ultraviolet lithography: A review

Nonchemically Amplified Molecular Resists Based on Sulfonium-Functionalized Sulfone Derivatives for Sub-13 nm Nanolithography

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography

Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography

Advanced lithography materials: From fundamentals to applications

Negative-tone molecular glass photoresist for high-resolution electron beam lithography

Synthesis of End-Cap Enabled Self-Immolative Photoresists For Extreme Ultraviolet Lithography

Solubility Change Behavior of Fluoroalkyl Ether-Tagged Dendritic Hexaphenol under Extreme UV Exposure

Extreme ultraviolet lithography reaches 5 nm resolution