Abstract:The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (Tg) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl]]-α,α-dimethylbenzylphenol, have demonstrated feature sizes as small as 50mn. Similarly, negative-tone images made using spiro-based compounds showed feature size as small as 60nm in lines/space patterns using e-beam lithography. Most recently we have demonstrated that fully and partially tert-butoxycarbonyl (t-Boc) protected calix[4]resorcinarene derivatives can be successfully studied as a positive-tone resist using EUV and E-beam lithography. Resolution as low as 35nm was obtained by EUV exposure.

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography

A Single-Component Molecular Glass Resist Based on Tetraphenylsilane Derivatives for Electron Beam Lithography

Novel Etch-Resistant Molecular Glass Photoresist Based on Pyrene Derivatives for Electron Beam Lithography

Phenolic Molecular Glasses As Resists for Next-Generation Lithography

Molecular Glass Resists for Next Generation Lithography

Nonchemically Amplified Molecular Resists Based on Sulfonium-Functionalized Sulfone Derivatives for Sub-13 nm Nanolithography

Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography

Negative-tone molecular glass photoresist for high-resolution electron beam lithography

Chemically Amplified Resist Based on Dendritic Molecular Glass for Electron Beam Lithography

CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Positive-tone Chemically Amplified Fullerene Resist

Materials for Future Lithography (invited Paper)

Monomers effect on the gas and humid barrier properties in PECVD deposited SiOx film on PET surface

Diazonaphthoquinone Molecular Glass Photoresists: Patterning without Chemical Amplification

Optically Transparent and Mechanically Tough Glass with Impact Resistance and Flame Retardance Enabled by Covalent/Supramolecular Interactions

Effect of Tetraethoxysilanes (TEOS) on the Nanomechanical Properties of Organic-Inorganic Hybrid Films

Synthesisi and Characterization of New PMMA-TiO2 Organic-Lnorganic Hybrid Glasses

Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist

A novel non-chemically amplified resist based on polystyrene-iodonium derivatives for electron beam lithography

Fabrication of a robust zwitterionic coating on glass with anti-fogging, anti-frosting, self-cleaning and antibacterial properties via UV-induced grafting polymerization

Transparent and Robust Superhydrophobic Structure on Silica Glass Processed with Microstereolithography Printing