Abstract:The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (Tg) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl]]-α,α-dimethylbenzylphenol, have demonstrated feature sizes as small as 50mn. Similarly, negative-tone images made using spiro-based compounds showed feature size as small as 60nm in lines/space patterns using e-beam lithography. Most recently we have demonstrated that fully and partially tert-butoxycarbonyl (t-Boc) protected calix[4]resorcinarene derivatives can be successfully studied as a positive-tone resist using EUV and E-beam lithography. Resolution as low as 35nm was obtained by EUV exposure.

Negative-tone molecular glass photoresist for high-resolution electron beam lithography

Polyvinylpyrrolidone Hybrid Photoresist for Two-color Sensitive Direct Laser Writing

CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Highly Sensitive Cationic Photoresist for High-Throughput Two-Photon Nanofabrication

Electron Beam Lithography: CO2‐Based Dual‐Tone Resists for Electron Beam Lithography (adv. Funct. Mater. 13/2021)

Click chemistry assisted organic-inorganic hybrid photoresist for ultra-fast two-photon lithography

Phenolic Molecular Glasses As Resists for Next-Generation Lithography

Molecular Glass Resists for Next Generation Lithography

Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist

Novel Etch-Resistant Molecular Glass Photoresist Based on Pyrene Derivatives for Electron Beam Lithography

10 Nm Scale Electron Beam Lithography Using a Triphenylene Derivative As a Negative/positive Tone Resist

Diazonaphthoquinone Molecular Glass Photoresists: Patterning without Chemical Amplification

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography

A triphenylene derivative as a novel negative/positive tone resist of 10 nanometer resolution

CO 2 ‐Based Dual‐Tone Resists for Electron Beam Lithography

Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

Materials for Future Lithography (invited Paper)

Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography

Performance of a high resolution chemically amplified electron beam resist at various beam energies

Chemically Amplified Resist Based on Dendritic Molecular Glass for Electron Beam Lithography

Positive-tone Chemically Amplified Fullerene Resist