A triphenylene derivative as a novel negative/positive tone resist of 10 nanometer resolution

T. Tada,T. Kanayama,A. P. G. Robinson,R. E. Palmer,M. T. Allen,J. A. Preece,K. D. M. Harris
DOI: https://doi.org/10.1016/S0167-9317(00)00348-8
2000-01-01
Abstract:We show that a triphenylene derivative, 2,3,6,7,10,11-hexapentyl-oxytriphenylene, acts as an electron beam resist of 10-nm resolution with high dry-etch durability. The triphenylene derivative exhibited positive and negative behaviors depending on the dose and developers. When pentanol was used as a developer, positive behavior was observed for electron doses between ~ 3 x 10^-^4 and ~ 1 x 10^-^3 C/cm^2 at 20 keV, and at higher doses, the resist exhibited negative behavior. When monochlorobenzene was used as a developer, only the negative behavior was observed with a sensitivity of 2x 10^-^3 C/cm^2 at 20 keV. Performance of the resists were demonstrated defining 10-nm dots and lines (negative tone), and fabricating a high aspect-ratio Si nanostructure with a single layer process.
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