Performance of a high resolution chemically amplified electron beam resist at various beam energies

Dongxu Yang,Andreas Frommhold,Alexandra McClelland,J. Roth,Mark C. Rosamond,E. H. Linfield,J. Osmond,Richard E. Palmer,Alex P. G. Robinson
DOI: https://doi.org/10.1016/j.mee.2016.03.010
IF: 2.3
2016-01-01
Microelectronic Engineering
Abstract:A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7μC/cm2 at 20kV. Dense features with a line width of 15nm have been demonstrated at 30kV, whilst a feature size of 12.5nm was achieved for dense lines at 100kV.
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