A New Chemically Amplified Resist for High Resolution Patterning by E-Beam Lithography

Bing-Rui Lu,Yifang Chen,Ejaz Huq,Xin-Ping Qu,Ran Liu
DOI: https://doi.org/10.1166/jnn.2010.2846
2010-01-01
Journal of Nanoscience and Nanotechnology
Abstract:In this work, we have undertaken evaluation of the lithography property of a recently available chemically amplified resist (CAR) resist, UV1116 supplied by Rohm and Haas Company. Systematic study of the EBL property such as sensitivity, contrast, high resolution limit and dense capability, as well as resistance to plasma dry etching has been carried out. In comparison with the performance of UVIII, we conclude that the UV1116 can be a good alternative with better lithography quality.
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