Abstract:The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (Tg) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl]]-α,α-dimethylbenzylphenol, have demonstrated feature sizes as small as 50mn. Similarly, negative-tone images made using spiro-based compounds showed feature size as small as 60nm in lines/space patterns using e-beam lithography. Most recently we have demonstrated that fully and partially tert-butoxycarbonyl (t-Boc) protected calix[4]resorcinarene derivatives can be successfully studied as a positive-tone resist using EUV and E-beam lithography. Resolution as low as 35nm was obtained by EUV exposure.

Synthesis of End-Cap Enabled Self-Immolative Photoresists For Extreme Ultraviolet Lithography

Highly Sensitive Cationic Photoresist for High-Throughput Two-Photon Nanofabrication

Polyvinylpyrrolidone Hybrid Photoresist for Two-color Sensitive Direct Laser Writing

Emerging trends in the chemistry of polymeric resists for extreme ultraviolet lithography

Photoresist for Extreme Ultraviolet Lithography

Understanding Etch Properties of Advanced Chemically Amplified EUV Resist

Single‐Component High‐Resolution Dual‐Tone EUV Photoresists Based on Precision Self‐Immolative Polymers

Microscopic deprotection mechanisms and acid loss pathways of chemically amplified photoresists for deep/extreme ultraviolet photolithography

Aqueous Developable and CO2‐Sourced Chemical Amplification Photoresist with High Performance

Polymerizable Nonionic Perfluorinated Photoacid Generators for High-Resolution Lithography

A novel non-chemically amplified resist based on polystyrene-iodonium derivatives for electron beam lithography

Fundamentals of the reaction-diffusion process in model EUV photoresists

Solubility Change Behavior of Fluoroalkyl Ether-Tagged Dendritic Hexaphenol under Extreme UV Exposure

Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists

Tin-oxo nanoclusters for extreme ultraviolet photoresists: Effects of ligands, counterions, and doping

Backbone Degradable Poly(aryl acetal) Photoresist Polymers: Synthesis, Acid Sensitivity, and Extreme Ultraviolet Lithography Performance

Inorganic Polymer Resists for EUVL

Materials for Future Lithography (invited Paper)

Design strategy of extreme ultraviolet resists