Abstract:The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (Tg) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl]]-α,α-dimethylbenzylphenol, have demonstrated feature sizes as small as 50mn. Similarly, negative-tone images made using spiro-based compounds showed feature size as small as 60nm in lines/space patterns using e-beam lithography. Most recently we have demonstrated that fully and partially tert-butoxycarbonyl (t-Boc) protected calix[4]resorcinarene derivatives can be successfully studied as a positive-tone resist using EUV and E-beam lithography. Resolution as low as 35nm was obtained by EUV exposure.

Inorganic Polymer Resists for EUVL

Silicon Containing Organic-Inorganic Hybrid Materials As Euv Photoresists

Silicon Backbone Polymers As EUV Resists

Polyvinylpyrrolidone Hybrid Photoresist for Two-color Sensitive Direct Laser Writing

Novel Silicon-Containing Polymers As Photoresist Materials for EUV Lithography

Emerging trends in the chemistry of polymeric resists for extreme ultraviolet lithography

Recent progress in non-photolithographic patterning of polymer thin films

Single‐Component High‐Resolution Dual‐Tone EUV Photoresists Based on Precision Self‐Immolative Polymers

Materials for Future Lithography (invited Paper)

Absorbance Measurement of Polymers at Extreme Ultraviolet Wavelength: Correlation Between Experimental and Theoretical Calculations

Synthesis of End-Cap Enabled Self-Immolative Photoresists For Extreme Ultraviolet Lithography

Backbone Degradable Poly(aryl acetal) Photoresist Polymers: Synthesis, Acid Sensitivity, and Extreme Ultraviolet Lithography Performance

Photoresist for Extreme Ultraviolet Lithography

A novel non-chemically amplified resist based on polystyrene-iodonium derivatives for electron beam lithography

Antigenecity of boar testicular hyaluronidase.

Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists

Aqueous Developable and CO2‐Sourced Chemical Amplification Photoresist with High Performance

Nonchemically Amplified Molecular Resists Based on Sulfonium-Functionalized Sulfone Derivatives for Sub-13 nm Nanolithography

Resist Materials for Extreme Ultraviolet Lithography: Toward Low‐Cost Single‐Digit‐Nanometer Patterning

Acidic acrylic polymers for nanoimprint lithography on flexible substrates

CO2‐Based Dual‐Tone Resists for Electron Beam Lithography