Abstract:The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (Tg) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl]]-α,α-dimethylbenzylphenol, have demonstrated feature sizes as small as 50mn. Similarly, negative-tone images made using spiro-based compounds showed feature size as small as 60nm in lines/space patterns using e-beam lithography. Most recently we have demonstrated that fully and partially tert-butoxycarbonyl (t-Boc) protected calix[4]resorcinarene derivatives can be successfully studied as a positive-tone resist using EUV and E-beam lithography. Resolution as low as 35nm was obtained by EUV exposure.

Silicon Backbone Polymers As EUV Resists

Inorganic Polymer Resists for EUVL

Silicon Containing Organic-Inorganic Hybrid Materials As Euv Photoresists

Novel Silicon-Containing Polymers As Photoresist Materials for EUV Lithography

Emerging trends in the chemistry of polymeric resists for extreme ultraviolet lithography

Materials for Future Lithography (invited Paper)

CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Single‐Component High‐Resolution Dual‐Tone EUV Photoresists Based on Precision Self‐Immolative Polymers

Nonchemically Amplified Molecular Resists Based on Sulfonium-Functionalized Sulfone Derivatives for Sub-13 nm Nanolithography

A novel non-chemically amplified resist based on polystyrene-iodonium derivatives for electron beam lithography

New High Resolution Liquid Crystal Electron Beam Resists

Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

Polysubstituted Derivatives of Triphenylene As High Resolution Electron Beam Resists for Nanolithography

Synthesis of End-Cap Enabled Self-Immolative Photoresists For Extreme Ultraviolet Lithography

Aqueous Developable and CO2‐Sourced Chemical Amplification Photoresist with High Performance

Backbone Degradable Poly(aryl acetal) Photoresist Polymers: Synthesis, Acid Sensitivity, and Extreme Ultraviolet Lithography Performance

Design strategy of extreme ultraviolet resists

Chemically Amplified Fullerene Resists, Spin-on Fullerene Hardmasks and High Aspect Ratio Etching

A spin-on photosensitive polymeric etch protection mask for anisotropic wet etching of silicon

Electron Beam Lithography: CO2‐Based Dual‐Tone Resists for Electron Beam Lithography (adv. Funct. Mater. 13/2021)

Chemically Amplified Phenolic Fullerene Electron Beam Resist