Antigenecity of boar testicular hyaluronidase.

M. Oara,S. Kawamura

1973-12-01

Abstract:

What problem does this paper attempt to address?

Polyvinylpyrrolidone Hybrid Photoresist for Two-color Sensitive Direct Laser Writing

Chun Cao,Yi-wei Qiu,Jian-ting Liu,Da-zhao Zhu,Chen-liang Ding,Zhen-yao Yang,Cui-fang Kuang,Xu Liu

DOI: https://doi.org/10.11777/j.issn1000-3304.2021.21323

2022-01-01

Acta Polymerica Sinica

Abstract:Organic-polymer photoresist is the medium and carrier of micro manufacturing by two-color sensitive direct laser writing technology, which directly affects the accuracy and authenticity of the micro structures. In this work, polyvinylpyrrolidone (PVP) is introduced into pentaerythritol triacrylate (PETA) to control the viscosity, mechanical strength, volume shrinkage and polymerization rate of photoresist. The results show that hydrogen bond is formed between PVP and PETA, which can be used as a crosslinking site to improve the crosslinking degree of photoresist. Meanwhile, the introduction of PVP also increases the viscosity of the system, reduces the oxygen inhibition, and finally effectively improves the photo-polymerization conversion rate (30.1%) of PETA in photoresist, obtaining higher sensitivity and lower polymerization threshold (6.5 mW, 20 wt% PVP). In addition, the PVP sharply reduces the volume shrinkage of photoresist from 18% to 3%, greatly weakening the internal stress of the fabricated structure, thus improving the lithography performance of micro structures. Finally, the minimum linewidth of PVP composited photoresist can reach 48 nm, which has higher uniformity and regularity than that of photoresist without PVP. Thus, this work is of great significance for high-precision and high-quality micro manufacturing and various applications. [GRAPHICS]
Highly Sensitive Cationic Photoresist for High-Throughput Two-Photon Nanofabrication

Zhiyuan Ma,Tengxiao Li,Xiaoqiang Dai,Xiaoming Shen,Xiaobing Wang,Huan Fu,Xianmeng Xia,Qinyan Zhu,Yinbo Zhu,Zhilong Yu,Chun Cao,Shangting You,Cuifang Kuang

DOI: https://doi.org/10.1002/adfm.202409859

IF: 19

2024-01-01

Advanced Functional Materials

Abstract:Two-photon lithography (TPL) is a powerful tool for 3D nanofabrication, however, high-throughput TPL remains challenging, especially for cationic-based photoresists. A novel cationic-based photoresist named TP-EO is developed for high-throughput and high-resolution TPL nanofabrication. High-speed fabrication is achieved by using a bimolecular photosensitizer-photo acid generator (PS-PAG) pair that can effectively solve the photosensitivity bottleneck in cationic-based photoresists. High-resolution nanofabrication is achieved by limiting the photoacid diffusion via tuning the monomer's intra- and inter-molecular stereo-structure. The fabrication of 3D structures is demonstrated with fine features (<200 nm), fast writing speed (100 mm s(-1)), and low shrinkage, and showcased the rapid fabrication of centimeter-scale nanodevices. TP-EO photoresist shows outstanding TPL fabrication speed and resolution among cationic-based photoresists, making it a promising solution for high-throughput 3D nanomanufacturing.
Click chemistry assisted organic-inorganic hybrid photoresist for ultra-fast two-photon lithography

Chun Cao,Jianting Liu,Xianmeng Xia,Xiaoming Shen,Yiwei Qiu,Cuifang Kuang,Xu Liu

DOI: https://doi.org/10.1016/j.addma.2022.102658

IF: 11

2022-01-01

Additive Manufacturing

Abstract:Although the development of two-photon lithography (TPL) for decades of years, fabrication of 2D micro architectures with high throughput is still challenging, due to the lack of suitable photoresists for ultra-fast TPL. In present work, curable zirconia nanoclusters (Zr-NCs) and click-chemistry were incorporated together to form an organic-inorganic hybrid photoresist. Interestingly, Zr-NCs endowed photoresists higher photosensitivity by means of improving the adsorption capacity and reducing the absolute fluorescence quantum yield of used initiator. Moreover, oxygen inhibition had been eliminated by effective thiol-ene click reaction. As a result, the maximum lithography speed of achieved photoresist was significantly enhanced to 2.0 m s-1, that was dozens of times higher than the reported TPL photoresists. Meanwhile, the photoresist also exhibited a distinguish minimum feature size (59 nm), attributed to high sensitivity and inhibited diffusion of free radical in solid photoresist film. Finally, a high quality micro QR code had been successful prepared by our photoresist at 1.0 m s-1, which can be recognized to visit the affiliated website. Therefore, this work might provide an alternative strategy to pave the way of ultra-fast 2D TPL.
Polymer Pen Chemical Lift-Off Lithography

Xiaobin Xu,Qing Yang,Kevin Cheung,Chuanzhen Zhao,Natcha Wattanatorn,Jason Belling,John Abendroth,Liane Siu Slaughter,Chad Mirkin,Anne Andrews,Paul Weiss

DOI: https://doi.org/10.1021/acs.nanolett.7b01236

IF: 10.8

2017-01-01

Nano Letters

Abstract:We designed and fabricated large arrays of polymer pens having sub-20 nm tips to perform chemical lift-off lithography (CLL). As such, we developed a hybrid patterning strategy called polymer-pen chemical lift-off lithography (PPCLL). We demonstrated PPCLL patterning using pyramidal and v-shaped polymer-pen arrays. Associated simulations revealed a nanometer-scale quadratic relationship between contact line widths of the polymer pens and two other variables: polymer-pen base line widths and vertical compression distances. We devised a stamp support system consisting of interspersed arrays of flat-tipped polymer pens that are taller than all other sharp-tipped polymer pens. These supports partially or fully offset stamp weights thereby also serving as a leveling system. We investigated a series of v-shaped polymer pens with known height differences to control relative vertical positions of each polymer pen precisely at the sub 20 nm scale mimicking a high-precision scanning stage. In doing so, we obtained linear-array patterns of alkanethiols with sub-SO nm to sub-500 nm line widths and minimum sub-20 nm line width tunable increments. The CLL pattern line widths were in agreement with those predicted by simulations. Our results suggest that through informed design of a stamp support system and tuning of polymer-pen base widths, throughput can be increased by eliminating the need for a scanning stage system in PPCLL without sacrificing precision. To demonstrate functional microarrays patterned by PPCLL, we inserted probe DNA into PPCLL patterns and observed hybridization-by complementary target sequences.
Recent progress in non-photolithographic patterning of polymer thin films

Mingjun Qiu,Weiwei Du,Shangyu Zhou,Pengzhe Cai,Yingwu Luo,Xiaoxue Wang,Rong Yang,Junjie Zhao

DOI: https://doi.org/10.1016/j.progpolymsci.2023.101688

IF: 31.281

2023-01-01

Progress in Polymer Science

Abstract:Patterned polymer thin films are essential components in many devices and applications owing to the multi-functionality, flexibility, lightweight and cost-efficiency. Unfortunately, conventional photolithography needs the use of developers and strippers which contain solvents and reagents that may dissolve, swell or degrade the polymer thin film substrates. Alternatively, non-photolithographic strategies provide alternative options and avoid the complicated optical systems, offering versatile routes for fabricating polymeric micro- and nanostructures. In this review, we summarize the recent progress in non-photolithographic patterning methods including soft lithography, nanoimprint lithography, direct writing, self-assembly of block copolymers, area-selective vapor phase deposition and instability induced patterning. These patterning approaches have been applied to various applications such as chromic devices, polymer light-emitting diodes, sensors, transistors, and protein and cellular engineering and many other scenarios. Finally, the subsisting challenges and future research directions of non-photolithographic patterning approaches are highlighted from the aspect of resolution, reliability and scalability.
A comprehensive study on three typical photoacid generators using photoelectron spectroscopy and ab initio calculations

Yanrong Jiang,Wenjin Cao,Zhubin Hu,Zhongyao Yue,Chunyuan Bai,Ruxin Li,Zhi Liu,Xue-Bin Wang,Peng Peng

DOI: https://doi.org/10.1063/5.0218918

IF: 4.304

2024-08-06

The Journal of Chemical Physics

Abstract:Conducting a comprehensive molecular-level evaluation of a photoacid generator (PAG) and its subsequent impact on lithography performance can facilitate the rational design of a promising 193 nm photoresist tailored to specific requirements. In this study, we integrated spectroscopy and computational techniques to meticulously investigate the pivotal factors of three prototypical PAG anions, p-toluenesulfonate (pTS−), 2-(trifluoromethyl)benzene-1-sulfonate (TFMBS−), and triflate (TF−), in the lithography process. Our findings reveal a significant redshift in the absorption spectra caused by specific PAG anions, attributed to their involvement in electronic transition processes, thereby enhancing the transparency of the standard PAG cation, triphenylsulfonium (TPS+), particularly at ∼193 nm. Furthermore, the electronic stability of PAG anions can be enhanced by solvent effects with varying degrees of strength. We observed the lowest vertical detachment energy of 6.6 eV of pTS− in PGMEA solution based on the polarizable continuum model, which prevents anion loss at 193 nm lithography. In addition, our findings indicate gas-phase proton affinity values of 316.4 kcal/mol for pTS−, 308.1 kcal/mol for TFMBS−, and 303.2 kcal/mol for TF−, which suggest the increasing acidity strength, yet even the weakest acid pTS− is still stronger than strong acid HBr. The photolysis of TPS+-based PAG, TPS+·pTS−, generated an excited state leading to homolysis bond cleavage with the lowest reaction energy of 83 kcal/mol. Overall, the PAG anion pTS− displayed moderate acidity, possessed the lowest photolysis reaction energy, and demonstrated an appropriate redshift. These properties collectively render it a promising candidate for an effective acid producer.

chemistry, physical,physics, atomic, molecular & chemical
New PFOS Free Photoresist Systems for EUV Lithography

Ramakrishnan Ayothi,Seung Wook Chang,Nelson Felix,Heiji B. Cao,Hai Deng,Wang Yueh,Christopher K. Ober

DOI: https://doi.org/10.2494/photopolymer.19.515

2006-01-01

Journal of Photopolymer Science and Technology

Abstract:New photoresist compositions containing tert-butyloxycarbonyl group protected C-4-hydroxyphenyl calix [4] resorcinarene molecular glasses and perfluorooctylsulfonate (PFOS) free photoacid generators (PAG) composed of a triphenylsulfonium aryloxyperfluoroalkylsulfonate was developed. The patterning performance of PFOS free photoresist compositions was examined using extreme ultraviolet (EUV or 13.4 nm) lithography and compared with photoresist compositions containing conventional perfluorobutanesulfonate (PFBS) PAGs. Features as small as 30 nm with low line edge roughness (LER) were readily obtained for both formulations. The non-PFOS photoacid generator forms acid that contains fewer fluorine atom than found in PFOS or in PFBS. The newly developed non-PFOS PAGs may find application in chemically amplified resists that address the environmental concerns raised by the widely used PFOS containing PAGs.
Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist

Jiaxing Gao,Siliang Zhang,Xuewen Cui,Xue Cong,Xudong Guo,Rui Hu,Shuangqing Wang,Jinping Chen,Yi Li,Guoqiang Yang

DOI: https://doi.org/10.1002/admi.202300194

IF: 5.4

2023-06-17

Advanced Materials Interfaces

Abstract:A "PDN first, PAG second" strategy using a combination of low reactivity PAG and high reactivity PDN, which means PDN decomposition first and PAG decomposition second in the EBL process and ensures high crosslinking density in the exposed region while suppressing the migration of reactive groups to the non‐exposed region, is performed to get high quality patterns. As the crucial dimension (CD) of logic circuits continues to shrink, the photoresist metrics, including resolution, line edge roughness, and sensitivity, are faced with significant challenges. Photoresists are indispensable in the integrated circuit manufacturing industry, and specifically in achieving smaller critical dimensions. In this study, the effects of two categories of photosensitive compounds on lithography performance are explored, through a series of sulfonium salt‐based photoacid generators (PAGs) with diverse reactivity and photodegradable nucleophiles (PDNs) with varying nucleophilicity. The detailed characterization and exposure experiments suggest that the reactive alterations of different PAGs are mostly associated with the amount of phenyl composed of cations in PAGs. The "PDN first, PAG second" strategy, which employs a combination of low reactivity PAG and high reactivity PDN and involves PDN decomposition first and PAG decomposition second in the electron beam lithography process, achieves high sensitivity (100–270 μC cm−2), high resolution (25 nm 1:1 line/space, L/S), and low line edge roughness (LER ≤ 3.3 nm) stripes. This approach outperforms conventional formulations and may provide a potentially effective and useful strategy to improve electron beam photoresists.

materials science, multidisciplinary,chemistry
Synthesis, Characterization and Lithography Performance of Novel Anionic Photoacid Generator (PAG) Bound Polymers

Kenneth E. Gonzalves,Mingxing Wang,W. Yueh,T. Her,Mingzhen Tang

DOI: https://doi.org/10.2494/PHOTOPOLYMER.20.793

Abstract:Two new monomeric anionic PAGs, and their corresponding polymers, were prepared and characterized. The acid generating efficiency of PAG bound polymers is in the order: NO2 PAG ≈ F4 PAG > CF3 PAG, which agrees well with the electron withdrawing power of the substituents. The NO2 PAG bound polymer showed better imaging resolution, than the CF3 PAG bound polymer. Based on the acid generating efficiency, and our previous results on F4 PAG bound polymer for EUV photoresists, these two new PAGs and PAG bound polymers have the potential for imaging via EUV lithography.

Chemistry,Materials Science
Aqueous Developable and CO2‐Sourced Chemical Amplification Photoresist with High Performance

Xin-Yu Lu,Rui-Sheng Zhang,Guan-Wen Yang,Qiang Li,Bo Li,Guang-Peng Wu

DOI: https://doi.org/10.1002/anie.202401850

2024-05-06

Angewandte Chemie International Edition

Abstract:Seeking high-performance photoresist is an important item for semiconductor industry due to the continuous miniaturization and intelligentization of integrated circuits. Polymer resin containing carbonate group has many desirable properties, such as high transmittance, acid sensitivity and chemical formulation, thus serving as potential photoresist material. In this work, a series of aqueous developable CO2-sourced polycarbonate (CO2-PC) were produced via alternating copolymerization of CO2 and epoxides bearing acid-cleavable cyclic acetal groups in the presence of tetranuclear organoborane catalyst. The produced CO2-PCs were investigated as chemical amplification resists in deep ultraviolet (DUV) lithography. Under the catalysis of photoacid, the acetal (ketal) groups in CO2-PC were hydrolysed into two equivalents of hydroxyl groups, which changes the exposed areas from hydrophobicity to hydrophilicity, thus enabling the exposed regions to be developed in water. Through normalized remaining thickness analysis, the optimal CO2-derived resist achieved a remarkable sensitivity of 1.9 mJ/cm2, a contrast of 7.9, a favorable resolution (750 nm, half pitch), and etching resistance (38% higher than poly(tert-butyl acrylate)). Such performances outperforming commercial KrF and ArF chemical amplification resists (i.e., polyhydroxystyrene-derived and polymethacrylate-based resists), which endows broad application prospects in the field of DUV (248 nm and 193 nm) and extreme ultraviolet (EUV) lithography and nanomanufacturing.

chemistry, multidisciplinary
Synthesis of End-Cap Enabled Self-Immolative Photoresists For Extreme Ultraviolet Lithography

Jingyuan Deng,Sean Bailey,Ruiwen Ai,Anthony Delmonico,Gregory Denbeaux,Shaoyi Jiang,Christopher K Ober

DOI: https://doi.org/10.1021/acsmacrolett.2c00395

2022-09-20

Abstract:Conventional chemically amplified resists (CARs) rely on the usage of photoacid generators to serve as the source of chemical amplification. However, acid diffusion inevitably accompanies CARs and has led to the resolution, line edge roughness, and sensitivity (RLS) trade-off, which is the most challenging technical problem for modern photoresists. Herein, we take advantage of the self-immolative property of polyphthalaldehyde (PPA) derivatives to create end-cap enabled chain scissionable resists for extreme ultraviolet (EUV) lithography. The feasibility of this strategy was demonstrated under UV photodegradation experiments. The dose-to-clear (DTC) under EUV radiation was 90 mJ/cm2 for the most promising resist, representing more than a 100-fold improvement over previous PPA resists. Density functional theory (DFT) calculations were conducted to understand the structural origin of end-cap EUV sensitivity.
Performance Tradeoffs in the Design of Photoacid Generators for ArF Lithography

J. Cameron,Nicholas Chan,G. Pohlers,K. Moore

DOI: https://doi.org/10.2494/PHOTOPOLYMER.14.345

Abstract:Photoacid generation is a critical step in the application of chemically amplified (CA) resist technology. During the key exposure step, a catalytic amount of a strong Br4nsted acid is released within these resists. The photoacid is subsequently used in a post-exposure bake step to catalytically react with the resist polymer. In the case of a positive tone resist, an acid sensitive polymer is deprotected to render the exposed areas soluble in dilute aqueous base thereby allowing for pattern development. As the semiconductor industry begins to focus on developing 193 nm photoresists for production, it is important to identify and understand differences between prototype 193 rim CA resists and current state of the art 248 nm production worthy photoresists. The major difference between 193 and 248 nm photoresists is the exposure wavelength, which is reduced to achieve higher resolution based on the Rayleigh equation. However, this change in wavelength has several ramifications: Firstly, the tried, tested and true phenolic polymers used in DUV resists are too absorbent to be used for 193 mm application and had to be replaced by low absorbing, non-aromatic systems. Second, since even these new platforms are still more absorbing at 193 nm than the phenolic matrices are at 248 nm, the PAG loading had to be lowered significantly in order to keep the overall absorbance of the resist down. This paper describes the results of our systematic studies on understanding the reasons for observed differences in photoacid generating efficiency between 193 and 248 nm chemically amplified resist systems. First, the wavelength effect is studied by comparing the relative acid generating efficiency of onium type PAGs in a prototype 193 nm and a DUV photoresist at both 193 nm and 248 nm exposure. Second, the photoacid generating efficiency for these PAGs at 248 nm is compared in both phenolic and non-phenolic based photoresists to probe resist polymer matrix effects. Third, these experiments were repeated while varying the PAG loading in order to probe whether there is an effect of PAG loading on acid generation efficiency. Lastly, by performing all of these studies on two different onium PAG classes (iodonium and sulfonium salts), the impact of the PAG chromophore on acid generation efficiency in both sensitized and unsensitized environments was probed. In all these studies, the C-parameter method is used to determine the quantum yield of photoacid generation. First, the exposure wavelength was found to play a significant role in determining the acid generation efficiency of both PAGs, namely efficiency significantly decreases when switching exposure wavelength from 248 to 193 nm. Second, it was also found that the change in the resist matrix polymer has a profound impact on the manner in which acid is generated: The phenolic matrix enables sensitized acid generation via electron transfer from the matrix to the PAG, whereas in the acrylate polymer only direct acid generation is observed. Due to the different oxidation potential of iodonium and sulfonium PAGs, the matrix effect impacts the photoacid generation efficiency of the two PAGs very differently. This is apparent in the observed change when going from the phenolic to the methacrylate matrix. Lastly, the presence of the sensitized channel is also responsible for the observed impact of PAG loading in the phenolic polymer, which is largely absent in the acrylate matrix.

Engineering,Materials Science
Recent Progress in Photo-Acid Generators for Advanced Photopolymer Materials

Tomotaka Tsuchimura

DOI: https://doi.org/10.2494/photopolymer.33.15

2020-07-01

Journal of Photopolymer Science and Technology

Abstract:Photopolymer materials have been widely used in some advanced industries owing to their practicability, low-cost, and ecological advantage. One of the key components of these photopolymer materials is a molecule that releases acidic species upon a photon trigger (known as Photo-acid generators, PAGs). Recently, PAGs have attracted much attention with novel technologies such as near-infrared CTP imaging, 3D printing, and EUV lithography, and are required to have various functions and sophisticated features. This review article summarizes recent advances in the molecular design and function of PAGs, which are required to respond to the increasing applications of the photopolymer materials in advanced industries.

polymer science
Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

Andreas Frommhold,Alexandra McClelland,Dongxu Yang,Richard E. Palmer,John Roth,Yasin Ekinci,Mark C. Rosamund,Alex P. G. Robinson

DOI: https://doi.org/10.1117/12.2085672

2015-01-01

Abstract:We have synthesized a new resist molecule and investigated its high-resolution capability. The material showed resolved line-spaces with 14 nm half-pitch (hp) and the potential to pattern 11 nm hp features. Line edge roughness values as low as 3.15 nm were seen in optimized formulations. The dose-to-size is estimated at around 20-30 mJ/cm2. The role of the molecule in the patterning process was studied by comparing it with structurally similar compounds. Furthermore we present first results from exposures of our materials at the Berkeley Micro Exposure Tool. Finally it is also demonstrated that the material works as a resist in 100 kV electron beam lithography as well.
Microscopic deprotection mechanisms and acid loss pathways of chemically amplified photoresists for deep/extreme ultraviolet photolithography

Hong Du,Zilin Wang,Hanshen Xin,Jie Xue,Jianhua Zhang,Haoyuan Li

DOI: https://doi.org/10.26434/chemrxiv-2024-bj8mk

2024-07-01

Abstract:Chemically amplified resists are an important type of material to realize precise microscopic patterning in deep and extreme ultraviolet photolithography. Currently, their development relies heavily on trial-and-error, while achieving higher sensitivity and resolution requires rational molecular design. This task can benefit from an in-depth comprehension of the acid-catalyzed deprotection mechanisms and acid loss pathways at the atomic level. However, our current understanding is largely empirical and the diverse types of photoresists and protective groups pose a significant challenge in fully revealing the microscopic mechanisms. In this study, density functional theory calculations are employed to investigate three primary types of deprotection reactions: tert-butyloxycarbonyl, ester, and ring-opening. Representative polymer photoresist units and fully/half-protected molecular glasses are considered as model systems. The calculations reveal multiple reaction pathways, each characterized by distinct energy barriers. In particular, the rate-determining steps are identified, and potential photoacid loss pathways are uncovered. These findings establish a comprehensive molecular understanding of the deprotection mechanisms of chemically amplified resists for advanced photolithography, providing valuable theoretical insights for their systematic design to achieve higher performances.

Chemistry
A novel non-chemically amplified resist based on polystyrene-iodonium derivatives for electron beam lithography

Xuewen Cui,Siliang Zhang,Xue Cong,Jiaxing Gao,Yurui Wu,Xudong Guo,Rui Hu,Shuangqing Wang,Jinping Chen,Yi Li,Wenna Du,Guoqiang Yang

DOI: https://doi.org/10.1088/1361-6528/ad3c4c

IF: 3.5

2024-04-11

Nanotechnology

Abstract:To break the resolution limitation of traditional resists, more work is needed on non-chemically amplified resists (non-CARs). Non-CARs based on iodonium salt modified polystyrene (PS-I) were prepared with controllable molecular weight and structure. The properties of the resist can be adjusted by the uploading of iodonium salts on the polymer chain, the materials with a higher proportion of iodonium salts show better lithography performance. By comparing contrast curves and quality of the lithographic patterns, the optimum developing condition of 4-methyl-2-pentanone and ethyl alcohol (v:v = 1:7) was selected. The high-resolution stripes of 15 nm half-pitch (HP) can be achieved by PS-I0.58 in e-beam lithography (EBL). PS-I0.58 shows the advanced lithography performance in the patterns of 16 nm HP and 18 nm HP stripes with low line edge roughness (LER) (3.0 nm and 2.4 nm). The resist shows excellent potential for further pattern transfer, the etch selectivity of resist PS-I0.58 to the silicon was close to 12:1. The lithographic mechanism of PS-I was investigated by experimental and theoretical calculation, which indicate the polarity of materials changes resulted in the solubility switch. This work provides a new option and useful guidelines for the development of high-resolution resist.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Emerging trends in the chemistry of polymeric resists for extreme ultraviolet lithography

Jie Cen,Zhengyu Deng,Shiyong Liu

DOI: https://doi.org/10.1039/d4py00957f

IF: 4.6

2024-10-16

Polymer Chemistry

Abstract:With the demand for increasingly smaller feature sizes, extreme ultraviolet (EUV) lithography has become the cutting-edge technology for fabricating highly miniaturized integrated circuits. However, the limited brightness of EUV light source, the distinct exposure mechanism, and the high resolution required for patterns pose significant challenges for resist materials—particularly for conventional polymeric resists, which often suffer from low EUV absorption, high molecular weight, and nonhomogeneous composition. In this Review, we focus on polymer resists for EUV lithography and offer our perspectives on recent exciting advances in the polymer chemistry of these resists. For example, in recent years, there has been significant progress in incorporating high EUV-absorbing moieties and photosensitizers into resists to enhance EUV absorbance and quantum efficiency. Additionally, advancements have been made in developing single-component chemically amplified resists (CARs) with covalently attached photoacid generators (PAGs), as well as in main-chain scission-type resists. Furthermore, the creation of precision oligomeric resists with precisely defined primary sequences and discrete molecular weights has opened new possibilities for EUV resist design. Lastly, we provide a critical outlook on the future opportunities and challenges in the development of EUV resists.

polymer science
CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Xin-Yu Lu,Hao Luo,Kai Wang,Yao-Yao Zhang,Xiao-Feng Zhu,Dongxue Li,Bingze Ma,Shisheng Xiong,Paul F. Nealey,Qiang Li,Guang-Peng Wu

DOI: https://doi.org/10.1002/adfm.202007417

IF: 19

2020-01-01

Advanced Functional Materials

Abstract:The increasing global environmental and energy crisis has urgently motivated the advancement of sustainable materials. Significant effort has been focused on developing new materials to replace the fossil‐based resists in the semiconductor industry based on greener sources such as ice, dry ice, small organic molecules, and proteins. Such resist materials, however, have yet to meet the stringent requirements of high sensitivity, high resolution, reliable repeatability, and good compatibility with the current protocols. To this end, CO2‐based polycarbonates (CO2‐PCs) obtained from the copolymerization of CO2 and epoxides are demonstrated as sustainable dual‐tone (positive & negative tone) resists for electron beam lithography. By adjusting the chemical structure, developing agent, and molecular weight, the CO2‐PCs present high sensitivities to electron beam (1.3/120 µC cm−2), narrow critical dimensions (29/58 nm), and moderate line edge roughness (4.6/26.7 nm) for negative and positive resists, respectively. A deep understanding of the exposure mechanism of CO2‐PC resists is provided on the basis of the Fourier transform infrared, Raman, and electron ionization mass spectroscopy. 2D photonic crystal devices are fabricated using the negative and positive CO2‐PC resists, respectively, and both devices show distinct colors derived from their well‐defined nanostructures, indicating the great practical potential of CO2‐derived electron beam resists.
Self-focusing 3D lithography with varying refractive index polyethylene glycol diacrylate

Hidetoshi Takahashi,Tetsuo Kan,Gayeong Lee,Nilsu Dönmez,Jieun Kim,Jihoon Park,Dongwook Kim,Yun Jung Heo

DOI: https://doi.org/10.35848/1882-0786/ab9ba3

IF: 2.819

2020-06-22

Applied Physics Express

Abstract:This work presents self-focusing 3D lithography based on the refractive index changes ofpolyethylene glycol diacrylate (PEGDA) during photopolymerization. Since the polymerization of PEGDAleads to an increase in the refractive index, the UV light rays in the PEGDA undergo a refractioneffect during exposure, thus being focused and forming 3D photopolymerized structures. Wedemonstrate the potential of self-focusing 3D lithography by fabricating PEGDA microneedles andtrapezoid-shaped microwells. Their structures well match our theoretical estimation. Therefore, ourtheoretical approach can provide a short route to realizing on-demand, complicated 3D structures ofrefractive-index-variable materials with single UV exposure.

physics, applied

Antigenecity of boar testicular hyaluronidase.

Polyvinylpyrrolidone Hybrid Photoresist for Two-color Sensitive Direct Laser Writing

Highly Sensitive Cationic Photoresist for High-Throughput Two-Photon Nanofabrication

Click chemistry assisted organic-inorganic hybrid photoresist for ultra-fast two-photon lithography

Polymer Pen Chemical Lift-Off Lithography

Recent progress in non-photolithographic patterning of polymer thin films

A comprehensive study on three typical photoacid generators using photoelectron spectroscopy and ab initio calculations

New PFOS Free Photoresist Systems for EUV Lithography

Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist

Synthesis, Characterization and Lithography Performance of Novel Anionic Photoacid Generator (PAG) Bound Polymers

Aqueous Developable and CO2‐Sourced Chemical Amplification Photoresist with High Performance

Synthesis of End-Cap Enabled Self-Immolative Photoresists For Extreme Ultraviolet Lithography

Performance Tradeoffs in the Design of Photoacid Generators for ArF Lithography

Recent Progress in Photo-Acid Generators for Advanced Photopolymer Materials

Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

Microscopic deprotection mechanisms and acid loss pathways of chemically amplified photoresists for deep/extreme ultraviolet photolithography

A novel non-chemically amplified resist based on polystyrene-iodonium derivatives for electron beam lithography

Emerging trends in the chemistry of polymeric resists for extreme ultraviolet lithography

CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Self-focusing 3D lithography with varying refractive index polyethylene glycol diacrylate