Highly Hydroxylated Hafnium Clusters Are Accessible to High Resolution EUV Photoresists under Small Energy Doses

Rai-Shung Liu,Yu-Fang Tseng,Pin-Chia Liao,Po-Hsiung Chen,Tsi-Sheng Gau,Burn-Jeng Lin,Po Wen Chiu
DOI: https://doi.org/10.1039/d3na00508a
IF: 5.598
2023-11-10
Nanoscale Advances
Abstract:This work reports the success to access high-resolution negative-tone EUV photoresists without radical chain growth in aggregation mechanism. The synthesis of a highly hydroxylated Hf6O4(OH)8(RCO2)8 cluster 3 (R = s-butyl or s-Bu) is described; its EUV performance enables high resolution patterns HP = 18 nm under only 30 mJ/cm2. This photoresist also achieves high resolution patterns for e-beam lithography. Our new photoresist design to increase hydroxide substitutions of carboxylate ligands in the Hf6O4(OH)4(RCO2)12 clusters improves the EUV resolution and also greatly reduces EUV doses. Mechanistic analysis indicates that EUV light not only enables photolytic decomposition of carboxylate ligands, but also enhances the Hf-OH dehydration. One additional advantage of cluster 3 is a very small loss of film thickness (ca. 13 %) after the EUV pattern development.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
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