Imaging and spectrometric performance of SiC Timepix3 radiation camera

B. Zaťko,A. Šagátová,L. Hrubčín,E. Kováčová,A. Novák,N. Kurucová,Š. Polansky,J. Jakůbek
DOI: https://doi.org/10.1088/1748-0221/19/01/c01003
2024-01-03
Journal of Instrumentation
Abstract:A Schottky barrier radiation detector and pixel imaging sensor fabricated from epitaxially grown SiC semiconductor were analyzed. The detector was based on an 80 μm thick epitaxial SiC layer. Capacitance-voltage measurement was performed to study the thickness of the space charge region of the detector as a function of applied bias. The results showed that the detector was completely depleted at a reverse bias higher than 300 V. The impurity concentration profile was also calculated, which indicated a net impurity concentration below 1.5×10 14 cm -3 . A prototype of a SiC Timpix3 radiation camera was fabricated, and its energy resolution was investigated using the 241 Am radioisotope. The camera exhibited an energy resolution of 4.5 keV for 60 keV gamma photons. X-ray fluorescence photons (from 14 keV to 22 keV) were detected with a resolution below 2.0 keV. The imaging quality of the camera was investigated using a test object. The prototype showed a high-quality image performance with a stable count rate, which was determined from uniform intensity profiles extracted from parts of the test object image. A disadvantage of this prototype is that the radiation hits the detector from the side of the substrate and only then it reaches its active SiC epitaxial layer. This represents a dead layer that reduced the detection efficiency of X-rays below 10 keV.
instruments & instrumentation
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