Silicon Carbide Timepix3 detector for quantum-imaging detection and spectral tracking of charged particles in wide range of energy and field-of-view

Andrej Novak,Carlos Granja,Andrea Sagatova,Jan Jakubek,Bohumir Zatko,Vladimir Vondracek,Michal Andrlik,Vaclav Zach,Stepan Polansky,Anuj Rathi,Cristina Oancea
2023-10-27
Abstract:The hybrid architecture of the Timepix (TPX) family of detectors enables the use of different semiconductor sensors, most commonly silicon (Si), as well as high-density materials such as Cadmium Telluride (CdTe) or Gallium Arsenide (GaAs). For this purpose, we explore the potential of a silicon carbide (SiC) sensor bump-bonded on a Timepix3 detector as a radiation imaging and particle tracking detector. SiC stands as a radiation-hard material also with the ability to operate at elevated temperatures up to several hundreds of degrees Celsius. As a result, this sensor material is more suitable for radiation harsh environments compared to conventional e.g., Si sensors. In this work, we evaluate the response for precise radiation spectrometry and high-resolution particle tracking of newly developed SiC Timepix3 detector which is built and operated as a compact radiation camera MiniPIX-Timepix3 with integrated readout electronics. Calibration measurements were conducted with mono-energetic proton beams with energies of 13, 22, and 31 MeV at the U-120M cyclotron at the Nuclear Physics Institute Czech Academy of Science (NPI CAS), Prague, as well as 100 and 226 MeV at the Proton Therapy Center Czech (PTC) in Prague. High-resolution pattern recognition analysis and single-particle spectral tracking are used for detailed inspection and understanding of the sensor response. Results include distributions of deposited energy and linear energy transfer (LET) spectra. The spatial uniformity of the pixelated detector response is examined in terms of homogeneously distributed deposited energy.
Instrumentation and Detectors,Medical Physics
What problem does this paper attempt to address?
The main problem this paper attempts to address is the development of a Timepix3 detector based on silicon carbide (SiC) sensors for quantum imaging detection and spectral tracking of charged particles over a wide range of energies and fields of view. Specifically, the researchers explored the possibility of using silicon carbide material as a radiation imaging and particle tracking detector, particularly for applications in high-radiation environments. Silicon carbide, as a radiation-resistant material, has the ability to operate at high temperatures, making it more suitable than traditional materials like silicon (Si) for applications in high-radiation environments, such as high-energy physics, space radiation monitoring, and particle radiation therapy. The paper experimentally evaluated the performance of the newly developed SiC Timepix3 detector under proton beam irradiation at different energies (13 to 226 MeV), including its uniformity, charge collection response, and spectral tracking response. In addition, the research also explored how to use high-resolution pattern recognition algorithms to analyze individual particle clusters to distinguish between different types of particles, and how to optimize the detection of high-energy charged particles by adjusting the angle of the sensor. These research results help to promote the application of SiC materials in various radiation environments, especially in scenarios that require long-term exposure to high-radiation conditions.