Abstract:The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 um thin CMOS Pixel Sensors (CPS) covering either the 3 innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 um CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz 0.18 um CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 10^13 n_eq/cm^2 was observed to yield a SNR ranging between 11 and 23 for coolant temperatures varying from 15 C to 30 C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation respectively. These satisfactory results allow to validate the TowerJazz 0.18 um CMOS process for the ALICE ITS upgrade.

Characterization of a CMOS pixel sensor for charged particle tracking

Radiation hardness study on a CMOS pixel sensor for charged particle tracking

Characterization of the first prototype CMOS pixel sensor developed for the CEPC vertex detector

A Full Functional Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

Beam Test of a Monolithic Active Pixel Sensor for the CEPC Vertex Detector

Prototype design of a Monolithic Active Pixel Sensor for the Electron-ion collider in China

Design and characterisation of the JadePix-3 CMOS pixel sensor

Beyond the CMOS sensors: the DoTPiX pixel concept and technology for the International Linear Collider A

MightyPix at the LHCb Mighty Tracker — verification of an HV-CMOS pixel chip's digital readout

Beam test of a 180 nm CMOS Pixel Sensor for the CEPC vertex detector

A Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

Charged particle detection using a CMOS active pixel sensor

CMOS MAPS with a Novel Readout Scheme for High Luminosity Particle Colliders

Study of CMOS Strip Sensor for Future Silicon Tracker

Characterisation of a customised 4-chip Timepix3 module for charged-particle tracking

Data Acquisition System for CEPC Vertex Detector Prototype

Silicon Carbide Timepix3 detector for quantum-imaging detection and spectral tracking of charged particles in wide range of energy and field-of-view

Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer

Pixel detector R&D for the Compact Linear Collider

M.i.p. detection performances of a 100 us read-out CMOS pixel sensor with digitised outputs