Growth and mechanical anisotropy of TiN thin films

W.J. Meng,G.L. Eesley
DOI: https://doi.org/10.1016/0040-6090(95)06875-9
IF: 2.1
1995-12-01
Thin Solid Films
Abstract:We have grown TiN thin films on Si(100) and Si(111) substrates by ultra-high vacuum d.c. magnetron reactive sputtering. TiN grows on Si(111) epitaxially while almost completely textured growth of TiN on Si(100) is achieved. Elastic constants of the TiN film are determined by measuring the longitudinal sound velocity with a time-resolved transient piezoreflectance technique. The mechanical response of these crystallographically anisotropic TiNSi film/substrate assemblies was further studied by sub-micron depth-sensing indentation. Consistent with the observed film orientations, we find an anisotropic mechanical response. Measured indentation modulus and hardness as a function of indentation depth are consistent with existing theories.
materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
What problem does this paper attempt to address?