Abstract:Titanium nitride (TiN) is a paradigm of refractory transition metal nitrides with great potential in vast applications. Generally, the plasmonic performance of TiN can be tuned by oxidation, which was thought to be only temperature-, oxygen partial pressure-, and time-dependent. Regarding the role of crystallographic orientation in the oxidation and resultant optical properties of TiN films, little is known thus far. Here we reveal that both the oxidation resistance behavior and the plasmonic performance of epitaxial TiN films follow the order of (001) < (110) < (111). The effects of crystallographic orientation on the lattice constants, optical properties, and oxidation levels of epitaxial TiN films have been systematically studied by combined high-resolution X-ray diffraction, spectroscopic ellipsometry, X-ray absorption spectroscopy, and X-ray photoemission spectroscopy. To further understand the role of crystallographic orientation in the initial oxidation process of TiN films, density-functional-theory calculations are carried out, indicating the energy cost of oxidation is (001) < (110) < (111), consistent with the experiments. The superior endurance of the (111) orientation against mild oxidation can largely alleviate the previously stringent technical requirements for the growth of TiN films with high plasmonic performance. The crystallographic orientation can also offer an effective controlling parameter to design TiN-based plasmonic devices with desired peculiarity, for example, superior chemical stability against mild oxidation or large optical tunability upon oxidation.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsphotonics.0c01827?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsphotonics.0c01827</a>.Full-range 2θ–ω scans, phi scans, detailed RSM analyses, rocking curves and temperature-dependent electrical transport of titanium (oxy)nitride films, fitting details of SE data, XPS O1<i>s</i> spectra, surface structures, and energies in the initial oxidation process of TiN calculated by DFT (<a class="ext-link" href="/doi/suppl/10.1021/acsphotonics.0c01827/suppl_file/ph0c01827_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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