TiNx Thin Films for Energy-Saving Application Prepared by Atmospheric Pressure Chemical Vapor Deposition

Xiaoxuan Lin,Gaoling Zhao,Liqing Wu,Gangfeng Duan,Gaorong Han
DOI: https://doi.org/10.1016/j.jallcom.2010.04.142
IF: 6.2
2010-01-01
Journal of Alloys and Compounds
Abstract:Non-stoichiometric titanium nitride (TiNx) thin films were fabricated on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) using titanium tetrachloride and NH3 as precursors. The relationships between x of TiNx thin films and the structure, electrical and optical properties of films were investigated. The results showed that the crystalline property of over-stoichiometric films was better than that of sub-stoichiometric films. Electrical resistivity of films declined with increasing x from 0.83 to 1.25. Spectrophotometer curves of films demonstrated that the plasma wavelength (λp) shifted from the near-infrared region to the visible region and the peak value of transmittance increased with increasing x. The TiNx thin film with x=1.25 had low sheet resistance of 5Ω/sq, high average reflectivity of 95% in the mid-far infrared region, 53% average reflectivity in the near-infrared region, and low average reflectivity of 10% in the visible region, indicating it can be a promising candidate as energy-saving films combining the function of solar control and low emission.
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