Abstract:To understand the complex interplay of topography and surface chemistry in wetting, fundamental studies investigating both parameters are needed. Due to the sensitivity of wetting to miniscule changes in one of the parameters it is imperative to precisely control the experimental approach. A profound understanding of their influence on wetting facilitates a tailored design of surfaces with unique functionality. We present a multi-step study: The influence of surface chemistry is analyzed by determining the adsorption of volatile carbonous species (A) and by sputter deposition of metallic copper and copper oxides on flat copper substrates (B). A precise surface topography is created by laser processing. Isotropic topography is created by ps laser processing (C), and hierarchical anisotropic line patterns are produced by direct laser interference patterning (DLIP) with different pulse durations (D). Our results reveal that the long-term wetting response of polished copper surfaces stabilizes with time despite ongoing accumulation of hydrocarbons and is dominated by this adsorption layer over the oxide state of the substrate (Cu, CuO, Cu2O). The surfaces' wetting response can be precisely tuned by tailoring the topography via laser processing. The sub-pattern morphology of primary line-like patterns showed great impact on the static contact angle, wetting anisotropy, and water adhesion. An increased roughness inside the pattern valleys combined with a minor roughness on pattern peaks favors air-inclusions, isotropic hydrophobicity, and low water adhesion. Increasing depth of the primary topography can also induce air-inclusions despite increasing peak roughness while time dependent wetting transitions were observed.

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Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Effect of Polish By-Products on Copper Chemical Mechanical Polishing Behavior

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Chemical effects on the tribological behavior during copper chemical mechanical planarization

The nature of mechanically polished surfaces of copper: Polishing with fine diamond abrasives

Polystyrene-Silica Composite Particles and Their Copper Chemical Mechanical Polishing Performances

Experimental and Computational Investigation of Complexing Agents on Copper Dissolution for Chemical Mechanical Polishing Process

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Effects of mixed inhibitors in copper chemical mechanical polishing at a low down pressure