Abstract:The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling constants of an effective lattice Hamiltonian describing the dimer interactions. Experimentally, the phase transition from the low-temperature $c(4 {\times} 2)$- to the high-temperature $p(2 {\times} 1)$-reconstructed surface is followed through the intensity and width of the superstructure spots within the temperature range 78-400 K. Near the critical temperature $T_c = 190.6\,\mathrm{K}$, we observe universal critical behavior of spot intensities and correlation lengths which falls into the universality class of the two-dimensional (2D) Ising model. From the ratio of correlation lengths along and across the dimer rows we determine effective nearest-neighbor couplings of an anisotropic 2D Ising model, $J_\parallel = (-24.9 \pm 0.9_\mathrm{stat} \pm 1.3_\mathrm{sys})\,\mathrm{meV}$ and $J_\perp = (-0.8 \pm 0.1_\mathrm{stat})\,\mathrm{meV}$. We find that the experimentally determined coupling constants of the Ising model can be reconciled with those of the more complex lattice Hamiltonian from DFT when the critical behavior is of primary interest. The anisotropy of the interactions derived from the experimental data via the 2D Ising model is best matched by DFT calculations using the PBEsol functional. The trends in the calculated anisotropy are consistent with the surface stress anisotropy predicted by the DFT functionals, pointing towards the role of surface stress reduction as a driving force for establishing the $c(4 {\times} 2)$-reconstructed ground state.

Experimental results from spectroscopic ellipsometry on the (7 × 7)Si(111) surface reconstruction: dielectric function determination

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Formation of the Schottky barrier at (3 × 1)NaSi(111) surface

Ab initio optical properties of Si(100)

First-Principles Study On Geometric And Electronic Structures Of Si(111)-Root 7 X Root 3-In Surface Reconstruction

Electronic-Structure And Its Dependence On Local Order For H/Si(111)-(1x1) Surfaces

Self-energy Effects on the Surface-State Energies of H-Si(111)1 X 1.

STUDIES OF Na ADSORBED ORDERLY AND DISORDERLY ON Si(111) SURFACE USING PES

Evidence for 2-D pi-bonded Surface Reconstructions on Si(111)

Electronic Structure of Yb/H–Si (111) Interface

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Atomic Structure Of The Si(112) 7x1-In Surface

Optical Second-Harmonic Spectra of Si(001) with H and Ge Adatoms: First-principles Theory and Experiment

Investigation of the Si(111) Surface in UHV: Oxidation and the Effect of Surface Phosphorus

Critical behavior of the dimerized Si(001) surface: Continuous order-disorder phase transition in the two-dimensional Ising universality class

Investigation of the Si(111)-(7x7) Surface by Second-Harmonic Generation: Oxidation and the Effects of Surface Phosphorus

Investigation Of The Si(111)-(7x7) Surface By 2nd-Harmonic Generation - Oxidation And The Effects Of Surface Phosphorus

Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry

Atomic Structure Of The Si(103)1x1-In Surface

Deciphering the Atomistic Mechanism of Si(111)-7 × 7 Surface Reconstruction Using a Machine-Learning Force Field