Abstract:Abstract HfO 2 -based thin films hold huge promise for integrated devices as they show full compatibility with semiconductor technologies and robust ferroelectric properties at nanometer scale. While their polarization switching behavior has been widely investigated, their electromechanical response received much less attention so far. Here, we demonstrate that piezoelectricity in Hf 0.5 Zr 0.5 O 2 ferroelectric capacitors is not an invariable property but, in fact, can be intrinsically changed by electrical field cycling. Hf 0.5 Zr 0.5 O 2 capacitors subjected to ac cycling undergo a continuous transition from a positive effective piezoelectric coefficient d 33 in the pristine state to a fully inverted negative d 33 state, while, in parallel, the polarization monotonically increases. Not only can the sign of d 33 be uniformly inverted in the whole capacitor volume, but also, with proper ac training, the net effective piezoresponse can be nullified while the polarization is kept fully switchable. Moreover, the local piezoresponse force microscopy signal also gradually goes through the zero value upon ac cycling. Density functional theory calculations suggest that the observed behavior is a result of a structural transformation from a weakly-developed polar orthorhombic phase towards a well-developed polar orthorhombic phase. The calculations also suggest the possible occurrence of a non-piezoelectric ferroelectric Hf 0.5 Zr 0.5 O 2 . Our experimental findings create an unprecedented potential for tuning the electromechanical functionality of ferroelectric HfO 2 -based devices.

Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf0.5Zr0.5O2

Photoinduced Patterning of Oxygen Vacancies to Promote the Ferroelectric Phase of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Charged Oxygen Vacancy Induced Ferroelectric Structure Transition in Hafnium Oxide

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Controlling the Ferroelectricity of Doped-HfO2 Via Reversible Migration of Oxygen Vacancy

Controlling the Ferroelectricity of Doped-HfO 2 via Reversible Migration of Oxygen Vacancy

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Ferroelectricity induced by oxygen vacancies in rhombohedral ZrO2 thin films

Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2

A General Physics Model of Oxygen Vacancy Dynamics for Ferroelectricity Enhancement and Degradation in Hafnia-Based Thin Films

Insights into the Origin of Robust Ferroelectricity in HfO2 -Based Thin Films from the Order-Disorder Transition Driven by Vacancies

Oxygen Vacancy Modulation with TiO₂ Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O₂ Thin Films

Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2

Non-centrosymmetric crystallization in ferroelectric hafnium zirconium oxide via photon-assisted defect modulation

Programmable Ferroelectricity in Hf0.5Zr0.5O2 Enabled by Oxygen Defect Engineering.

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants