Abstract:Abstract HfO 2 -based thin films hold huge promise for integrated devices as they show full compatibility with semiconductor technologies and robust ferroelectric properties at nanometer scale. While their polarization switching behavior has been widely investigated, their electromechanical response received much less attention so far. Here, we demonstrate that piezoelectricity in Hf 0.5 Zr 0.5 O 2 ferroelectric capacitors is not an invariable property but, in fact, can be intrinsically changed by electrical field cycling. Hf 0.5 Zr 0.5 O 2 capacitors subjected to ac cycling undergo a continuous transition from a positive effective piezoelectric coefficient d 33 in the pristine state to a fully inverted negative d 33 state, while, in parallel, the polarization monotonically increases. Not only can the sign of d 33 be uniformly inverted in the whole capacitor volume, but also, with proper ac training, the net effective piezoresponse can be nullified while the polarization is kept fully switchable. Moreover, the local piezoresponse force microscopy signal also gradually goes through the zero value upon ac cycling. Density functional theory calculations suggest that the observed behavior is a result of a structural transformation from a weakly-developed polar orthorhombic phase towards a well-developed polar orthorhombic phase. The calculations also suggest the possible occurrence of a non-piezoelectric ferroelectric Hf 0.5 Zr 0.5 O 2 . Our experimental findings create an unprecedented potential for tuning the electromechanical functionality of ferroelectric HfO 2 -based devices.

What problem does this paper attempt to address?

This paper primarily investigates the tunability of piezoelectricity in hafnium oxide (Hf0.5Zr0.5O2) ferroelectric capacitors. The researchers found that the piezoelectric coefficient (d33) of this material can not only change from positive to negative through electric field cycling, but also zero out the net piezoelectric response while maintaining a fully switchable polarization state under suitable conditions. This finding challenges the previous understanding of the piezoelectric properties of Hf0.5Zr0.5O2, which is commonly believed to have a fixed piezoelectric coefficient. Experiments show that after alternating current field cycling treatment, Hf0.5Zr0.5O2 capacitors undergo a continuous transition from the original positive d33 to negative d33, while the polarization monotonically increases. Further research indicates that through specific alternating current training, the sign of d33 throughout the entire capacitor volume can be uniformly reversed, and the net piezoelectric response can be reduced to zero while polarization remains switchable. Additionally, the piezoresponse force microscopy signal also gradually approaches zero with alternating current field cycling. Theoretical calculations suggest that this behavior may be a result of the transition from a weakly developed polar orthorhombic phase to a well-developed polar orthorhombic phase in the structure. The calculations also imply the existence of a non-piezoelectric phase in Hf0.5Zr0.5O2. These experimental results provide unprecedented potential for tailoring the electromechanical functionality of ferroelectric HfO2-based devices. In summary, the problem that this paper attempts to address is whether the piezoelectric properties of Hf0.5Zr0.5O2 material can be controlled through electric field cycling and how this control affects its polarization behavior, thus providing new insights for the future development of novel electronic devices.

Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Unravelling the nanoscale mechanism of polarization reversal in a Hf0.5Zr0.5O2-based ferroelectric capacitor by vector piezoresponse force microscopy

Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Field‐Induced Ferroelectric Phase Evolution During Polarization "Wake‐Up" in Hf0.5Zr0.5O2 Thin Film Capacitors

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0.5Zr0.5O2 polycrystalline films

Operando observation of reversible oxygen migration and phase transitions in ferroelectric devices

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Development of ferroelectricity with crystallographic phase transformation in Hf 0.5 Zr 0.5 O 2 thin films upon initial stimulation of an electric field exceeding the coercive field

On the Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack

Mechanical Polarization Switching in Hf 0.5 Zr 0.5 O 2 Thin Film

In situ grazing incidence synchrotron x-ray diffraction studies on the wakeup effect in ferroelectric Hf0.5Zr0.5O2 thin films

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films