Abstract:Abstract Ferroelectric hafnia-based thin films have attracted intense attention due to their compatibility with complementary metal-oxide-semiconductor technology. However, the ferroelectric orthorhombic phase is thermodynamically metastable. Various efforts have been made to stabilize the ferroelectric orthorhombic phase of hafnia-based films such as controlling the growth kinetics and mechanical confinement. Here, we demonstrate a key interface engineering strategy to stabilize and enhance the ferroelectric orthorhombic phase of the Hf 0.5 Zr 0.5 O 2 thin film by deliberately controlling the termination of the bottom La 0.67 Sr 0.33 MnO 3 layer. We find that the Hf 0.5 Zr 0.5 O 2 films on the MnO 2 -terminated La 0.67 Sr 0.33 MnO 3 have more ferroelectric orthorhombic phase than those on the LaSrO-terminated La 0.67 Sr 0.33 MnO 3 , while with no wake-up effect. Even though the Hf 0.5 Zr 0.5 O 2 thickness is as thin as 1.5 nm, the clear ferroelectric orthorhombic (111) orientation is observed on the MnO 2 termination. Our transmission electron microscopy characterization and theoretical modelling reveal that reconstruction at the Hf 0.5 Zr 0.5 O 2 / La 0.67 Sr 0.33 MnO 3 interface and hole doping of the Hf 0.5 Zr 0.5 O 2 layer resulting from the MnO 2 interface termination are responsible for the stabilization of the metastable ferroelectric phase of Hf 0.5 Zr 0.5 O 2 . We anticipate that these results will inspire further studies of interface-engineered hafnia-based systems.

Controlling the Ferroelectricity of Doped-HfO 2 via Reversible Migration of Oxygen Vacancy

Controlling the Ferroelectricity of Doped-HfO2 Via Reversible Migration of Oxygen Vacancy

Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration

Programmable Ferroelectricity in Hf0.5Zr0.5O2 Enabled by Oxygen Defect Engineering.

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Oxygen Vacancy Modulation with TiO₂ Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O₂ Thin Films

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Charged Oxygen Vacancy Induced Ferroelectric Structure Transition in Hafnium Oxide

Operando observation of reversible oxygen migration and phase transitions in ferroelectric devices

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Ferroelectricity in HfO 2 from a Coordination Number Perspective

Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation

Synergistic effect of strain and oxygen vacancy on the ferroelectric properties of hafnium oxide-based ferroelectric films

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

Ultrahigh Oxygen Ion Mobility in Ferroelectric Hafnia

Interface control of tetragonal ferroelectric phase in ultrathin Si-doped HfO2 epitaxial films

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Polarization description of successive ferroelectric switching in hafnia

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers