Abstract:High crystalline hexagonal boron nitride epilayers are grown on sapphire by submicron‐spacing vapor deposition, and their luminescence properties are investigated by low temperature cathodoluminescence spectra. Two deep ultraviolet emissions at 5.49 and 5.35 eV are ascribed to the recombination of bound excitons and its phonon replica, while the origination of 4.0 eV defect‐related emission is attributed to the radiative transition from C impurities occupying the B sites to the B vacancies based on the theoretically predicted energy levels. As an emerging 2D ultrawide bandgap semiconductor, hexagonal boron nitride (h‐BN) is gaining significant attention for its superior properties and wide applications. Although optical properties of h‐BN have been partially revealed by using h‐BN bulk single crystal, luminescence properties of the h‐BN few‐layer are rare due to its poor crystallinity. In this work, the h‐BN epilayers have been synthesized on sapphire substrates by the submicron‐spacing vapor deposition method. The crystalline quality of the h‐BN epilayer is improved with the increase of the growth temperature, and the full width at half‐maximum of the Raman peak is only ≈13 cm−1. The low temperature cathodoluminescence spectra of h‐BN epilayers exhibit two strong deep ultraviolet (DUV) luminescence peaks at 5.49 and 5.35 eV, as well as a weaker and broader defect‐related emission band at ≈4.0 eV. The DUV emission band is ascribed to the recombination of bound excitons and its phonon replica. Based on the theoretically predicted energy levels, the 4.0 eV emission band is tentatively attributed to the radiative transition from C impurities occupying the B sites to the B vacancies. Moreover, the h‐BN‐based DUV photodetectors exhibit an outstanding performance, making it a promising prospect for optoelectronic applications.

Luminescence Properties of the Hexagonal Boron Nitride Epilayer

Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals

Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

Facile Synthesis and Characterization of Hexagonal Boron Nitride Nanoplates by Two‐Step Route

Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics

Unambiguous identification of the indirect band nature of atomically thin hexagonal boron nitride

Room temperature deep UV photoluminescence from low dimensional hexagonal boron nitride prepared using a facile synthesis

Hyperhoneycomb Boron Nitride With Anisotropic Mechanical, Electronic, And Optical Properties

Defect-related photoluminescence of hexagonal boron nitride

High-Crystallinity and High-Temperature Stability of the Hexagonal Boron Nitride Film Grown on Sapphire

Luminescent defects in a few-layer h-BN film grown by molecular beam epitaxy

Dimensionality effects on the luminescence properties of hBN

Covalent Heteroepitaxy of Large‐Area Vertical Hexagonal Boron Nitride for High‐Temperature VUV Photodetectors

Spatially-resolved UV-C emission in epitaxial monolayer boron nitride

Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy

Hexagonal boron nitride is an indirect bandgap semiconductor

Epitaxial hexagonal boron nitride with high quantum efficiency

From the synthesis of hBN crystals to their use as nanosheets for optoelectronic devices