Abstract:Several high‐quality single‐crystalline transition metal dichalcogenides are directly grown on an epitaxial h‐BN/sapphire substrate via vdW epitaxy, indicating the h‐BN is an ideal template for vdW epitaxy. The full width at half maximum of the X‐ray diffraction rocking curve for the HfSe2 layers on single‐crystal h‐BN is only 9.6 arcmin, indicating an extremely high degree of out‐plane orientation and high crystallinity. Van der Waals (vdW) heterostructures comprising of transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h‐BN) are promising building blocks for novel 2D devices. The vdW epitaxy provides a straightforward integration method for fabricating high‐quality TMDs/h‐BN vertical heterostructures. In this work, the vdW epitaxy of high‐quality single‐crystal HfSe2 on epitaxial h‐BN/sapphire substrates by chemical vapor deposition is demonstrated. The epitaxial HfSe2 layers exhibit a uniform and atomically sharp interface with the underlying h‐BN template, and the epitaxial relationship between HfSe2 and h‐BN/sapphire is determined to HfSe2 (0001)[12 ̄ 10]//h‐BN (0001)[11 ̄ 00]//sapphire (0001)[11 ̄ 00]. Impressively, the full width at half maximum of the rocking curve for the epitaxial HfSe2 layer on single‐crystal h‐BN is as narrow as 9.6 arcmin, indicating an extremely high degree of out‐plane orientation and high crystallinity. Benefitting from the high crystalline quality of HfSe2 epilayers and the weak interfacial scattering of HfSe2/h‐BN, the photodetector fabricated from the vdW epitaxial HfSe2 on single‐crystal h‐BN shows the best performance with an on/off ratio of 1 × 104 and a responsivity up to 43 mA W−1. Furthermore, the vdW epitaxy of other TMDs such as HfS2, ZrS2, and ZrSe2 is also experimentally demonstrated on single‐crystal h‐BN, suggesting the broad applicability of the h‐BN template for the vdW epitaxy.

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