Epitaxial hexagonal boron nitride with high quantum efficiency

David Arto Laleyan,Woncheol Lee,Ying Zhao,Yuanpeng Wu,Ping Wang,Jun Song,Emmanouil Kioupakis,Zetian Mi

DOI: https://doi.org/10.1063/5.0142242

IF: 6.6351

2023-05-01

APL Materials

Abstract:Two-dimensional (2D) hexagonal boron nitride (h-BN) is one of the few materials showing great promise for light emission in the far ultraviolet (UV)-C wavelength, which is more effective and safer in containing the transmission of microbial diseases than traditional UV light. In this report, we observed that h-BN, despite having an indirect energy bandgap, exhibits a remarkably high room-temperature quantum efficiency (∼60%), which is orders of magnitude higher than that of other indirect bandgap material, and is enabled by strong excitonic effects and efficient exciton-phonon interactions. This study offers a new approach for the design and development of far UV-C optoelectronic devices as well as quantum photonic devices employing 2D semiconductor active regions.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

The paper primarily aims to address the following issues:

1. **Far UV-C Light Source Development**: Investigating how to utilize hexagonal boron nitride (h-BN) as an efficient far UV-C (wavelength range 207-222 nm) emitting material. Far UV-C light is more effective and safer for disinfection compared to traditional UV light.

2. **Enhancement of Indirect Bandgap Semiconductor Emission Efficiency**: Despite h-BN having an indirect bandgap, extremely high photoluminescence quantum efficiency (approximately 60%) is achieved through strong exciton effects and efficient exciton-phonon coupling, which is several orders of magnitude higher than other indirect bandgap semiconductors.

3. **High-Quality h-BN Thin Film Growth**: The study examined the impact of different substrates on the growth of h-BN thin films and found that nickel (Ni) substrates, due to minimal lattice mismatch and optimal interface interaction, are ideal for growth.

4. **Defect Control and Optimization**: Through theoretical calculations, the defect formation energies of h-BN in different chemical environments were analyzed, guiding the preparation conditions for high-quality h-BN thin films.

5. **Improvement of Light Extraction Efficiency**: Research indicates that the emission polarization characteristics of h-BN help improve light extraction efficiency, and its indirect bandgap nature can avoid reabsorption phenomena, further enhancing its potential as an efficient UV light source.

In summary, this paper aims to demonstrate through theoretical and experimental means that h-BN, as an indirect bandgap material, can achieve high quantum efficiency far UV-C emission at room temperature and explores its application prospects in deep UV optoelectronic devices.