Abstract:High crystalline hexagonal boron nitride epilayers are grown on sapphire by submicron‐spacing vapor deposition, and their luminescence properties are investigated by low temperature cathodoluminescence spectra. Two deep ultraviolet emissions at 5.49 and 5.35 eV are ascribed to the recombination of bound excitons and its phonon replica, while the origination of 4.0 eV defect‐related emission is attributed to the radiative transition from C impurities occupying the B sites to the B vacancies based on the theoretically predicted energy levels. As an emerging 2D ultrawide bandgap semiconductor, hexagonal boron nitride (h‐BN) is gaining significant attention for its superior properties and wide applications. Although optical properties of h‐BN have been partially revealed by using h‐BN bulk single crystal, luminescence properties of the h‐BN few‐layer are rare due to its poor crystallinity. In this work, the h‐BN epilayers have been synthesized on sapphire substrates by the submicron‐spacing vapor deposition method. The crystalline quality of the h‐BN epilayer is improved with the increase of the growth temperature, and the full width at half‐maximum of the Raman peak is only ≈13 cm−1. The low temperature cathodoluminescence spectra of h‐BN epilayers exhibit two strong deep ultraviolet (DUV) luminescence peaks at 5.49 and 5.35 eV, as well as a weaker and broader defect‐related emission band at ≈4.0 eV. The DUV emission band is ascribed to the recombination of bound excitons and its phonon replica. Based on the theoretically predicted energy levels, the 4.0 eV emission band is tentatively attributed to the radiative transition from C impurities occupying the B sites to the B vacancies. Moreover, the h‐BN‐based DUV photodetectors exhibit an outstanding performance, making it a promising prospect for optoelectronic applications.

Dimensionality effects on the luminescence properties of hBN

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

Excitonic recombinations in hBN: from bulk to exfoliated layers

Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes

Luminescence Properties of the Hexagonal Boron Nitride Epilayer

Defect-related photoluminescence of hexagonal boron nitride

Spatially-resolved UV-C emission in epitaxial monolayer boron nitride

Excitons and stacking order in h-BN

From the synthesis of hBN crystals to their use as nanosheets for optoelectronic devices

From the synthesis of hBN crystals to their use as nanosheets in van der Waals heterostructures

Characterization methods dedicated to nanometer-thick hBN layers

Photoluminescence properties of pyrolytic boron nitride

Room temperature deep UV photoluminescence from low dimensional hexagonal boron nitride prepared using a facile synthesis

Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals

Luminescent defects in a few-layer h-BN film grown by molecular beam epitaxy

Spectral characterization of long-lived luminescence in h-BN nanopowder under UV excitation

Correlated Structural and Optical Characterization of Hexagonal Boron Nitride

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Low-temperature electron-phonon interaction of quantum emitters in hexagonal Boron Nitride

Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization