Room temperature deep UV photoluminescence from low dimensional hexagonal boron nitride prepared using a facile synthesis

Ashly Sunny,Aniket Balapure,Ramakrishnan Ganesan,R. Thamankar

DOI: https://doi.org/10.48550/arXiv.2203.15022

2022-03-29

Abstract:Evaluation of the defect levels in low-dimensional materials is an important aspect of quantum science. In this article, we report a facile synthesis method of hexagonal boron nitride (h-BN) and evaluate the defects and their light emission characteristics. The thermal annealing procedure is optimized to obtain clean h-BN. The UV-Vis spectroscopy shows the optical energy gap of 5.28 eV which is comparable to the reported energy gap for exfoliated, clean h-BN samples. The optimized synthesis route of h-BN has generated two kinds of defects which are characterised using room temperature photoluminescence measurements. The defects emit light at 4.18 eV (in deep ultraviolet region) and 3.44 eV (ultraviolet), respectively. The defect emitting deep ultraviolet (DUV) has oscillatory dependency on the excitation energy, while that emitting 3.44 eV light (ZPL3.44 eV) has a phonon bands with mean energy level separation of 125 meV measured at room temperature. This agrees very well with the Franck-Condon-like structure having regularly spaced energy levels, which are typical indications of single defect levels in the low dimensional h-BN.

Mesoscale and Nanoscale Physics,Quantum Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to evaluate the defect energy levels in low - dimensional materials. In particular, it is to prepare hexagonal boron nitride (h - BN) through a simple synthesis method and study its photoluminescence properties at room temperature. Specifically, the author hopes to obtain pure h - BN by optimizing the thermal annealing process and characterize the defects and their luminescence properties in it through photoluminescence measurement.

### Research Background and Problem Description

1. **Significance of Research on Low - Dimensional Materials**:
- Low - dimensional materials (such as graphene, MoS₂, etc.) have important applications in nano - electronic devices and quantum information processing because of their unique physical properties (such as electronic band structure and energy gap).
- Hexagonal boron nitride (h - BN), as a wide - band - gap material, exhibits a layered structure similar to that of graphene, but has a large energy gap (about 6 eV), making it potentially applicable in electronic devices and quantum technologies.

2. **Defects and Photoluminescence of h - BN**:
- Defects in h - BN can serve as single - photon emission sources, which are very important for quantum communication and quantum computing.
- Previous studies have shown that defects such as nitrogen vacancies in h - BN can lead to photoluminescence in the deep - ultraviolet (DUV) and ultraviolet (UV) regions.

3. **Research Objectives**:
- Develop a simple synthesis method to prepare high - quality multi - layer h - BN.
- Analyze the structural and optical properties of the material by means of X - ray diffraction (XRD), ultraviolet - visible spectroscopy (UV - Vis), X - ray photoelectron spectroscopy (XPS), etc.
- Study the defects and their luminescence properties in h - BN through room - temperature photoluminescence measurement.

### Main Findings

1. **Structural Analysis**:
- XRD results show that the optimized heat treatment process has successfully synthesized pure h - BN, and the main diffraction peak is located at 2θ ≈ 26.9°, corresponding to the (002) crystal plane.
- The UV - Vis spectrum shows that the energy gap of the sample is 5.28 eV, which is consistent with the values reported in the literature.

2. **Photoluminescence Properties**:
- Room - temperature photoluminescence measurement has revealed two types of defects:
- Deep - ultraviolet (DUV) luminescence, with a peak at 4.18 eV (296.5 nm), which may be due to carbon replacing nitrogen (C - N) or boron vacancies (V_B).
- Ultraviolet (UV) luminescence, with a peak at 3.44 eV, showing a zero - phonon line (ZPL), accompanied by equally spaced phonon sidebands with an energy interval of about 125 meV.
- These photoluminescence properties can be explained by the Franck - Condon principle, indicating that these defects have good single - photon emission performance.

### Conclusion

This study has successfully prepared high - quality multi - layer h - BN through a simple synthesis method and has characterized its structural and photoluminescence properties in detail. The study has found two types of defects that emit light in the DUV and UV regions respectively, which provides important experimental basis for the development of single - photon sources and quantum communication devices based on h - BN.

### Formula Summary

- **Energy Gap**: \[ E_g = 5.28 \, \text{eV} \]
- **DUV Luminescence Energy**: \[ E_{DUV} = 4.18 \, \text{eV} \]
- **UV Luminescence Energy**: \[ E_{UV} = 3.44 \, \text{eV} \]
- **Phonon Energy Interval**: \[ \Delta E_{ph} = 125 \, \text{meV} \]

These results provide important scientific basis for understanding the defect structure and its photoluminescence properties in h - BN.