Abstract:High crystalline hexagonal boron nitride epilayers are grown on sapphire by submicron‐spacing vapor deposition, and their luminescence properties are investigated by low temperature cathodoluminescence spectra. Two deep ultraviolet emissions at 5.49 and 5.35 eV are ascribed to the recombination of bound excitons and its phonon replica, while the origination of 4.0 eV defect‐related emission is attributed to the radiative transition from C impurities occupying the B sites to the B vacancies based on the theoretically predicted energy levels. As an emerging 2D ultrawide bandgap semiconductor, hexagonal boron nitride (h‐BN) is gaining significant attention for its superior properties and wide applications. Although optical properties of h‐BN have been partially revealed by using h‐BN bulk single crystal, luminescence properties of the h‐BN few‐layer are rare due to its poor crystallinity. In this work, the h‐BN epilayers have been synthesized on sapphire substrates by the submicron‐spacing vapor deposition method. The crystalline quality of the h‐BN epilayer is improved with the increase of the growth temperature, and the full width at half‐maximum of the Raman peak is only ≈13 cm−1. The low temperature cathodoluminescence spectra of h‐BN epilayers exhibit two strong deep ultraviolet (DUV) luminescence peaks at 5.49 and 5.35 eV, as well as a weaker and broader defect‐related emission band at ≈4.0 eV. The DUV emission band is ascribed to the recombination of bound excitons and its phonon replica. Based on the theoretically predicted energy levels, the 4.0 eV emission band is tentatively attributed to the radiative transition from C impurities occupying the B sites to the B vacancies. Moreover, the h‐BN‐based DUV photodetectors exhibit an outstanding performance, making it a promising prospect for optoelectronic applications.

Facile Synthesis and Characterization of Hexagonal Boron Nitride Nanoplates by Two‐Step Route

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Construction of a Nanoporous Highly Crystalline Hexagonal Boron Nitride from an Amorphous Precursor for Catalytic Dehydrogenation.

Three-leaf Dart-Shaped Single-Crystal BN Formation Promoted by Surface Oxygen

From Highly Purified Boron Nitride to Boron Nitride‐Based Heterostructures: an Inorganic Precursor‐Based Strategy

From the synthesis of hBN crystals to their use as nanosheets for optoelectronic devices

Bio-inspired Synthesis of Highly Crystallized Hexagonal Boron Nitride Nanosheets

Hierarchical Structures: Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics (Adv. Funct. Mater. 6/2014)

Combustion synthesis of hexagonal boron nitride nanoplates with high aspect ratio

From the synthesis of hBN crystals to their use as nanosheets in van der Waals heterostructures

Hyperhoneycomb Boron Nitride With Anisotropic Mechanical, Electronic, And Optical Properties

Facile synthesis of vertically aligned hexagonal boron nitride nanosheets hybridized with graphitic domains

Remote Catalyzation for Growth of Boron Nitride Nanotubes by Low Pressure Chemical Vapor Deposition

Novel Boron Nitride Hollow Nanoribbons.

Preparation of Thin-Layered Hexagonal Boron Nitride Nanosheet with Oxygen Doping

Luminescence Properties of the Hexagonal Boron Nitride Epilayer

Synthesis of Square Bi2wo6 Nanoplates As High-Activity Visible-Light-Driven Photocatalysts

High-Quality Hexagonal Boron Nitride from 2D Distillation

Comprehensive characterization and analysis of hexagonal boron nitride on sapphire

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence