Spatially-resolved UV-C emission in epitaxial monolayer boron nitride
A. Rousseau,Juliette Plo,Pierre Valvin,Tin S Cheng,Jonathan Bradford,Tyler Saunders Socrates James,James Wrigley,Chris J Mellor,Peter H Beton,Sergei V Novikov,Vincent Jacques,Bernard Gil,Guillaume Cassabois
DOI: https://doi.org/10.1088/2053-1583/ad2f45
IF: 6.861
2024-03-03
2D Materials
Abstract:We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photoluminescence, which appear to be spatially uncorrelated. Systematic measurements as a function of the excitation energy bring evidence of a photoluminescence singlet at ~6.045 eV. The spatial variations of the photoluminescence energy are found to be around ~10 meV, revealing that the inhomogeneous broadening is lower than the average photoluminescence linewidth of ~25 meV, a value close to the radiative limit in monolayer hBN. Our methodology provides an accurate framework for assessing the opto-electronic properties of hBN in the prospect of scalable hBN-based devices fabricated by epitaxy.
materials science, multidisciplinary
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