Abstract:The radiative performance of hexagonal boron nitride (h-BN) was assessed by the spatio-time-resolved luminescence measurements on its microcrystals (MCs) annealed in an O2 gas ambient. The MCs exhibited distinct deep ultraviolet luminescence peaks higher than 5.7 eV, although h-BN is an indirect bandgap semiconductor. The result indicates a strong interaction between the indirect excitons (iXs) and LO/TO (and LA/TA) phonons at T points of the Brillouin zone. Such phonon replicas of free iXs and a luminescence band at 4.0 eV showed negligible thermal quenching, most probably assisted by the strong excitonic effect, enhanced phonon scattering, and formation of a surface BxOy layer that prevents excitons from surface recombination by the thermal excitation. Conversely, the luminescence band between 5.1 and 5.7 eV, which seems to consist of LO/TO phonon replicas of iXs localized at a certain structural singularity that are further scattered by multiple TO phonons at K points and another two emission peaks that originate from the singularity, showed the thermal quenching. In analogy with GaN and AlGaN, cation vacancy complexes most likely act as native nonradiative recombination centers (NRCs). In the present case, vacancy complexes that contain a boron vacancy (VB), such as divacancies with a nitrogen vacancy (VN), VBVN, are certain to act as NRCs. In this instance, iXs delocalized from the singularity are likely either captured by NRCs or the origin of the 4.0 eV-band; the latter is assigned to originate from a carbon on the N site or a complex between VB and an oxygen on the N site.

Excitons and stacking order in h-BN

Distinguishing different stackings in layered materials via luminescence spectroscopy

Excitonic recombinations in hBN: from bulk to exfoliated layers

Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation

Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization

Coupling of excitons and defect states in boron-nitride nanostructures

Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals

Spatially-resolved UV-C emission in epitaxial monolayer boron nitride

Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences

Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes

Optical Signatures of Quantum Emitters in Suspended Hexagonal Boron Nitride

Electronic Structure of Exfoliated and Epitaxial Hexagonal Boron Nitride

Exciton self-trapping in twisted hexagonal boron nitride homostructures

Stacking fault and defects in single domain multilayered hexagonal boron nitride

Dimensionality effects on the luminescence properties of hBN

Intervalley Excitonic Hybridization, Optical Selection Rules, and Imperfect Circular Dichroism in Monolayer h − BN

Elementary excitations of single-photon emitters in hexagonal Boron Nitride

Optical absorption and photoluminescence of single layer boron nitride from a first principles cumulant approach

Band gap measurements of monolayer h-BN and insights into carbon-related point defects