Abstract:Defects in two-dimensional boron nitride (BN) are candidates for a manifold of applications, for example, as single-photon emitters or optically addressable spin defects. However, the topic has proven to be complex and despite extensive research efforts, knowledge on midgap defects and their signature in photoluminescence (PL) remains fragmentary. Mass production of high-quality layered BN by Metal Organic Vapor Phase Epitaxy (MOVPE) is possible and effective, thus understanding the conditions of formation and identifying defects that arise in the material grown by this method is extremely important. Here, we present an analysis of the influence of the MOVPE growth conditions of layered BN on the occurrence of specific structural defects. PL spectra in the visible range were analysed involving the Huang-Rhys theory implemented in the fitting procedure for polycrystalline samples grown under various conditions. Such an approach allowed us to separate bands from individual entities. Two bands at 1.57 eV and 2.6 eV with phonon replicas were observed. The three additional bands are characterized by a broad emission centered at 1.38 eV, 1.9 eV and 2.24 eV. Further properties, including an analysis of the surface morphology, the impact of annealing and laser bleaching on the PL spectra and Positron Annihilation Spectroscopy (PAS) were considered to draw conclusions about the nature of the examined defects. The PAS analysis correlated with the PL of the BN layers allows us to classify the studied samples in terms of the concentrations of boron vacancies and their complexes. Based on the obtained results, we propose that the rich family of PL bands observed in various sp2-BN layers is associated with different defect complexes build of boron vacancies (VB), boron antisite defects (BN), substitutional carbon defects (CB, CN) and their donor-acceptor pairs. The main value of this paper is the transfer of knowledge gained about defects and the corresponding luminescent bands to characterize high-quality continuous epitaxial sp 2 -BN layers. The presented results constitute an important step toward the deterministic manipulation of defect concentrations in two-dimensional boron nitride, which opens up new pathways for future optoelectronic device application.

Distinguishing different stackings in layered materials via luminescence spectroscopy

Excitons and stacking order in h-BN

Optical absorption and photoluminescence of single layer boron nitride from a first principles cumulant approach

Coupling of excitons and defect states in boron-nitride nanostructures

Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin

Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences

Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation

Electron-phonon Scattering and Stacking Sequences in Hexagonal Boron Nitride: an Ab Initio Study

Theory of phonon-assisted luminescence in solids: Application to hexagonal boron nitride

Optical Absorption and Photoluminescence of Single-Layer Boron Nitride from a First-Principles Cumulant Approach

Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence

Spatially-resolved UV-C emission in epitaxial monolayer boron nitride

Defect-related photoluminescence of hexagonal boron nitride

Dimensionality effects on the luminescence properties of hBN

Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated cathodoluminescence, photoluminescence, and strain mapping

Defects in layered boron nitride grown by Metal Organic Vapor Phase Epitaxy: Luminescence and positron annihilation studies

X-ray Excited Optical Luminescence from Hexagonal Boron Nitride Nanotubes: Electronic Structures and the Role of Oxygen Impurities.

Photoluminescence of hexagonal boron nitride: effect of surface oxidation under UV-laser irradiation

Low-temperature electron-phonon interaction of quantum emitters in hexagonal Boron Nitride

Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals