Abstract:Boron nitride (BN) is a material with outstanding technological promise because of its exceptional thermochemical stability, structural, electronic and thermal conductivity properties, and extreme hardness. Yet, the relative thermodynamic stability of its most common polymorphs (diamond-like cubic and graphite-like hexagonal) has not been resolved satisfactorily because of the crucial role played by kinetic factors in the formation of BN phases at high temperatures and pressures (experiments), and by competing bonding, electrostatic and many-body dispersion forces in BN cohesion (theory). This lack of understanding hampers the development of potential technological applications, and challenges the boundaries of fundamental science. Here, we use high-level first-principles theories that correctly reproduce all important electronic interactions (the adiabatic-connection fluctuation-dissipation theorem in the random phase approximation) to estimate with unprecedented accuracy the energy differences between BN polymorphs, and thus overcome the accuracy hurdle that hindered previous theoretical studies. We show that the ground-state phase of BN is cubic and that the frequently observed hexagonal polymorph becomes entropically stabilized over the cubic at temperatures slightly above ambient conditions ($T_{\rm c \to h} = 335 \pm 30$ K). We also reveal a low-symmetry monoclinic phase that is extremely competitive with the other low-energy polymorphs and which could explain the origins of the experimentally observed "compressed h-BN" phase. Our theoretical findings therefore should stimulate new experimental efforts in bulk BN as well as promote the use of high-level theories in modelling of technologically relevant van der Waals materials.

Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation

Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization

Excitons in boron nitride single layer

Coupling of excitons and defect states in boron-nitride nanostructures

Optical absorption and photoluminescence of single layer boron nitride from a first principles cumulant approach

Excitonic effects in optical absorption and electron-energy loss spectra of hexagonal boron nitride

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Intervalley Excitonic Hybridization, Optical Selection Rules, and Imperfect Circular Dichroism in Monolayer h − BN

Excitons and stacking order in h-BN

Excitonic recombinations in hBN: from bulk to exfoliated layers

Exciton self-trapping in twisted hexagonal boron nitride homostructures

Excitons in twisted AA' hexagonal boron nitride bilayers

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

The influence of high-energy local orbitals and electron-phonon interactions on the band gaps and optical spectra of hexagonal boron nitride

Polymorphism of Bulk Boron Nitride

Excitons in boron nitride nanotubes: dimensionality effects

Electronic Structure of Exfoliated and Epitaxial Hexagonal Boron Nitride

Unambiguous identification of the indirect band nature of atomically thin hexagonal boron nitride

Tunable exciton polaritons in band-gap engineered hexagonal boron nitride

Bandgap Characteristics of Boron-Containing Nitrides—Ab Initio Study for Optoelectronic Applications

Low-temperature electron-phonon interaction of quantum emitters in hexagonal Boron Nitride