Abstract:The radiative performance of hexagonal boron nitride (h-BN) was assessed by the spatio-time-resolved luminescence measurements on its microcrystals (MCs) annealed in an O2 gas ambient. The MCs exhibited distinct deep ultraviolet luminescence peaks higher than 5.7 eV, although h-BN is an indirect bandgap semiconductor. The result indicates a strong interaction between the indirect excitons (iXs) and LO/TO (and LA/TA) phonons at T points of the Brillouin zone. Such phonon replicas of free iXs and a luminescence band at 4.0 eV showed negligible thermal quenching, most probably assisted by the strong excitonic effect, enhanced phonon scattering, and formation of a surface BxOy layer that prevents excitons from surface recombination by the thermal excitation. Conversely, the luminescence band between 5.1 and 5.7 eV, which seems to consist of LO/TO phonon replicas of iXs localized at a certain structural singularity that are further scattered by multiple TO phonons at K points and another two emission peaks that originate from the singularity, showed the thermal quenching. In analogy with GaN and AlGaN, cation vacancy complexes most likely act as native nonradiative recombination centers (NRCs). In the present case, vacancy complexes that contain a boron vacancy (VB), such as divacancies with a nitrogen vacancy (VN), VBVN, are certain to act as NRCs. In this instance, iXs delocalized from the singularity are likely either captured by NRCs or the origin of the 4.0 eV-band; the latter is assigned to originate from a carbon on the N site or a complex between VB and an oxygen on the N site.

Excitons in boron nitride nanotubes: dimensionality effects

The Excitonic Effects In Single And Double-Walled Boron Nitride Nanotubes

Excitonic effects in optical absorption and electron-energy loss spectra of hexagonal boron nitride

Optical absorption in small BN and C nanotubes

Narrowed Bandgaps and Stronger Excitonic Effects from Small Boron Nitride Nanotubes

Excitons in boron nitride single layer

Coupling of excitons and defect states in boron-nitride nanostructures

Optical absorption and photoluminescence of single layer boron nitride from a first principles cumulant approach

Raman Spectroscopy of Single-Wall Boron Nitride Nanotubes

Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization

Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation

Isotope effect on band gap and radiative transitions properties of boron nitride nanotubes.

The vibration properties of the (n,0) boron nitride nanotubes from ab initio quantum chemical simulations

Cubic BN optical gap and intragap optically active defects

X-ray Excited Optical Luminescence from Hexagonal Boron Nitride Nanotubes: Electronic Structures and the Role of Oxygen Impurities.

Pressure-Induced Boron Nitride Nanotube Derivatives: 3d Metastable Allotropes

Quantum light in curved low dimensional hexagonal boron nitride systems

Large shift current via in-gap and charge-neutral exciton excitations in BN nanotubes and single BN layer

Optical Absorption and Photoluminescence of Single-Layer Boron Nitride from a First-Principles Cumulant Approach

Giant exciton-phonon coupling and zero-point renormalization in hexagonal monolayer boron nitride

Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals