Abstract:Quantum emitters based on atomic defects in layered hexagonal Boron Nitride (hBN) have emerged as promising solid state 'artificial atoms' with atom-like photophysical and quantum optoelectronic properties. Similar to other atom-like emitters, defect-phonon coupling in hBN governs the characteristic single-photon emission and provides an opportunity to investigate the atomic and electronic structure of emitters as well as the coupling of their spin- and charge-dependent electronic states to phonons. Here, we investigate these questions using photoluminescence excitation (PLE) experiments at T=4K on single photon emitters in multilayer hBN grown by chemical vapor deposition. By scanning up to 250 meV from the zero phonon line (ZPL), we can precisely measure the emitter's coupling efficiency to different phonon modes. Our results show that excitation mediated by the absorption of one in-plane optical phonon increases the emitter absorption probability ten-fold compared to that mediated by acoustic or out-of-plane optical phonons. We compare these measurements against theoretical predictions by first-principles density-functional theory of four defect candidates, for which we calculate prevalent charge states and their spin-dependent coupling to bulk and local phonon modes. Our work illuminates the phonon-coupled dynamics in hBN quantum emitters at cryogenic temperature, with implications more generally for mesoscopic quantum emitter systems in 2D materials and represents possible applications in solid-state quantum technologies.

Giant exciton-phonon coupling and zero-point renormalization in hexagonal monolayer boron nitride

The influence of high-energy local orbitals and electron-phonon interactions on the band gaps and optical spectra of hexagonal boron nitride

Excitonic effects in optical absorption and electron-energy loss spectra of hexagonal boron nitride

Influence of high-energy local orbitals and electron-phonon interactions on the band gaps and optical absorption spectra of hexagonal boron nitride

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Phonon-mediated superconductivity near the lattice instability in hole-doped hydrogenated monolayer hexagonal boron nitride

Optical absorption and photoluminescence of single layer boron nitride from a first principles cumulant approach

Room-temperature phonon-coupled single-photon emission in hexagonal boron nitride

Observation of the nonanalytic behavior of optical phonons in monolayer hexagonal boron nitride

Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride

High-Resolution X-Ray Absorption Studies of Core Excitons in Hexagonal Boron Nitride

Low-temperature electron-phonon interaction of quantum emitters in hexagonal Boron Nitride

Excitons in boron nitride nanotubes: dimensionality effects

Hexagonal boron nitride is an indirect bandgap semiconductor

Photoluminescent properties of the carbon-dimer defect in hexagonal boron-nitride: A many-body finite-size cluster approach

Direct observation of highly confined phonon polaritons in suspended monolayer hexagonal boron nitride

Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation

Excitons in boron nitride single layer

Intervalley Excitonic Hybridization, Optical Selection Rules, and Imperfect Circular Dichroism in Monolayer h − BN

Revealing Abnormal Phonon Polaritons Confined at the Edge of Curved Two-Dimensional Boron Nitride

Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy