Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride
Daniel Wigger,Robert Schmidt,Osvaldo Del Pozo-Zamudio,Johann A Preuß,Philipp Tonndorf,Robert Schneider,Paul Steeger,Johannes Kern,Yashar Khodaei,Jaroslaw Sperling,Steffen Michaelis de Vasconcellos,Rudolf Bratschitsch,Tilmann Kuhn
DOI: https://doi.org/10.1088/2053-1583/ab1188
IF: 6.861
2019-04-09
2D Materials
Abstract:Defect centers in hexagonal boron nitride represent room-temperature single-photon sources in a layered van der Waals material. These light emitters appear with a wide range of transition energies ranging over the entire visible spectrum, which renders the identification of the underlying atomic structure challenging. In addition to their eminent properties as quantum light emitters, the coupling to phonons is remarkable. Their photoluminescence exhibits significant side band emission well separated from the zero phonon line (ZPL) and an asymmetric broadening of the ZPL itself. In this combined theoretical and experimental study we show that the phonon side bands can be well described in terms of the coupling to bulk longitudinal optical (LO) phonons. To describe the ZPL asymmetry we show that in addition to the coupling to longitudinal acoustic (LA) phonons also the coupling to local mode oscillations of the defect center with respect to the entire host crystal has to be considered. By studying the influence of the emitter's wave function dimensions on the phonon side bands we find reasonable values for the size of the wave function and the deformation potentials. We perform photoluminescence excitation measurements to demonstrate that the excitation of the emitters is most efficient by LO-phonon assisted absorption.Single-photon emitters are at the heart of many promising quantum technologies such as quantum computing and quantum cryptography. Although there are various solid-state emitters of single photons, there is still no system available, which simultaneously meets all requirements [<a href="#tdmab1188bib001">1</a>]. For example, self-assembled semiconductor quantum dots [<a href="#tdmab1188bib002">2</a>, <a href="#tdmab1188bib003">3</a>] represent a mature technology platform, but presently yield optimum performance only at cryogenic temperatures. Another class of single-photon emitters are defect centers in insulators, such as color centers in diamond [<a href="#tdmab1188bib004">4</a>–<a href="#tdmab1188bib006">6</a>]. These defect centers exhibit prominent single-photon emission also at room temperature but suffer from a high refractive index and challenging processability of the host crystal. Recently, a new class of single-photon emitters in atomically thin semiconductors has been discovered [<a href="#tdmab1188bib007">7</a>–<a href="#tdmab1188bib013">13</a>] and has been deterministically positioned on the nanoscale by strain engineering [<a href="#tdmab1188bib014">14</a>–<a href="#tdmab1188bib016">16</a>]. Defect centers in hexagonal boron-nitride (hBN) combine features from these material classes [<a href="#tdmab1188bib017">17</a>–<a href="#tdmab1188bib032">32</a>]. They have the characteristics of an atomically sized defect center and at the same time share the advantages of a layered structure, i.e. the ultimate limit of miniaturization due to their atomic thickness and high mechanical robustness.In this work, we investigate the photoluminescence (PL) and photon absorption of defect centers in hBN nanocrystals. By developing a theoretical model to calculate the PL spectrum taking into account the coupling to bulk longitudinal optical (LO) and longitudinal acoustic (LA) phonons and to the oscillation of a local mode, we explain measured emission spectra achieving an excellent agreement between experiment and theory. In addition, we verify by means of photoluminescence excitation (PLE) spectroscopy that coupling to LO phonons provides an efficient way of exciting individual single-photon emitters. This then allows for the isolation of a desired single-photon emitter from the wide range of emission energies of various defect centers in hBN.Localized single-photon emitters are investigated in hBN nanopowder deposited on a Si/SiO<sub>2</sub> substrate (see supplementary material for details about the structure (<a href="http://stacks.iop.org/TDM/6/035006/mmedia">stacks.iop.org/TDM/6/035006/mmedia</a>)). Figure <a href="#tdmab1188f01">1</a> presents typical measured room-temperature PL spectra of six different localized light emitters in hBN. The transition energy of the emitters , which is called the zero phonon line (ZPL) (labeled with numbers (1) to (6) in figure <a href="#tdmab1188f01">1(a)</a>) varies over a large range between 1.6 eV and 2.5 eV [<a href="#tdmab1188bib019">19</a>]. The energy of the excited states of the emitters has already been extensively studied, both theoretically via DFT calculations [<a href="#tdmab1188bib031">31</a>, <a href="#tdmab1188bib033">33</a>–<a href="#tdmab1188bib035">35</a>] and experimentally [<a href="#tdmab1188bib019">19</a>, <a href="#tdmab1188bib023">23</a>–<a href="#tdmab1188bib027">27</a>, <a href="#tdmab1188bib029">29</a>, <a href="#tdmab1188bib031">31</a>, <a href="#tdmab1188bib032">32</a>, <a href="#tdmab1188bib036">36</a>]. Although different types of atomic defects such as N- or B-vacancies o <p>-Abstract Truncated-</p>
materials science, multidisciplinary