Abstract:Epitaxial titanium nitride (TiN) and titanium oxynitride (TiON) thin films have been grown on sapphire substrates using a pulsed laser deposition (PLD) method in high-vacuum conditions (base pressure <3 × 10-6 T). This vacuum contains enough residual oxygen to allow a time-independent gas phase oxidation of the ablated species as well as a time-dependent regulated surface oxidation of TiN to TiON films. The time-dependent surface oxidation is controlled by means of film deposition time that, in turn, is controlled by changing the number of laser pulses impinging on the polycrystalline TiN target at a constant repetition rate. By changing the number of laser pulses from 150 to 5000, unoxidized (or negligibly oxidized) and oxidized TiN films have been obtained with the thickness in the range of four unit cells to 70 unit cells of TiN/TiON. X-ray photoelectron spectroscopy (XPS) investigations reveal higher oxygen content in TiON films prepared with a larger number of laser pulses. The oxidation of TiN films is achieved by precisely controlling the time of deposition, which affects the surface diffusion of oxygen to the TiN film lattice. The lattice constants of the TiON films obtained by x-ray diffraction (XRD) increase with the oxygen content in the film, as predicted by molecular dynamics (MD) simulations. The lattice constant increase is explained based on a larger electrostatic repulsive force due to unbalanced local charges in the vicinity of Ti vacancies and substitutional O. The bandgap of TiN and TiON films, measured using UV-visible spectroscopy, has an asymmetric V-shaped variation as a function of the number of pulses. The bandgap variation following the lower number of laser pulses (150-750) of the V-shaped curve is explained using the quantum confinement effect, while the bandgap variation following the higher number of laser pulses (1000-5000) is associated with the modification in the band structure due to hybridization of O2p and N2p energy levels.

Room temperature oxidation behavior of TiN thin films

Surface Characterization of Thermally Oxidized Titanium Alloys

Structure, Electrical and Optical Properties of TiNx Films by Atmospheric Pressure Chemical Vapor Deposition

Study of optical and electrical properties of TiN thin films prepared by cathodic ion sputtering

Modulation of Structural, Electronic, and Optical Properties of Titanium Nitride Thin Films by Regulated In Situ Oxidation

Study on the Electrical and Optical Properties of Vanadium Doped TiN Thin Films Prepared by Atmospheric Pressure Chemical Vapor

Evolution of chemical, structural, and mechanical properties of titanium nitride thin films deposited under different nitrogen partial pressure

Transformation of TiN to TiNO films via In-situ Temperature-dependent Oxygen Diffusion Process and their Electrochemical Behavior

Influence of room-temperature oxidation on stability and performance of reactively sputtered TaN thin films for high-precision sheet resistors

Structural and Hydrophilic Properties of TiN Films Prepared by Ultrasonic Atomization Assisted Spray Method under Low Temperature

The Structure and Properties of V Doped TiN Films Prepared at Various Temperatures

TiNx Thin Films for Energy-Saving Application Prepared by Atmospheric Pressure Chemical Vapor Deposition

Low Temperature Deposition of TiN Using Tetrakis(dimethylamido)‐Titanium in an Electron Cyclotron Resonance Plasma Process

Stability of Ni in Nitinol Oxide Surfaces

Microstructural and Electrical Resistivity of TiN Electrode Films Prepared by Direct Current (DC) Reactive Magnetron Sputtering

Optical and plasmonic properties of high electron density epitaxial and oxidative controlled titanium nitride thin films

Oxidation Behavior of Titanium Carbonitride Coating Deposited by Atmospheric Plasma Spray Synthesis

Role of nitrogen in the high-temperature oxidation of titanium alloys

Morphology and Physical Properties of Titanium Nitride Films Deposited by Magnetron Sputtering at Room Temperature

A Study on the Preparation of Tio2-Xnx Films by Reactive Deposition and Their Absorption Properties in Visible Region

Microstructure, residual stress, and fracture of sputtered TiN films