Abstract:Nano-crystalline titanium nitride (TiN) thin films were deposited on silicon wafer and glass slides substrates by reactive DC magnetron sputtering technique. The effect of the sputtering current, in the range of 300 - 700 mA, on the structure of the as-deposited films was investigated. The as-deposited thin films were characterized by several techniques. The crystal structure was characterized by GI-XRD technique. The thickness, microstructure and surface morphologies were evaluated by FE-SEM technique. The chemical composition was measured by EDS technique. The film’s color was measured by the UV-Vis spectrophotometer. The results showed that the as-deposited TiN thin films had face center cubic (fcc) structure with the planes of (111), (200), (220), and (311). The lattice constant was in the range of 4.241 - 4.245 A. The as-deposited thin films exhibited a nanostructure with a crystal size of less than 65 nm.The thickness and crystallite size were increased as the sputtering current was increased. The results showed that the thickness was varied from 412 nm to 1202 nm and the crystallite size were found from 37.0 nm to 64.3 nm. The as-deposited thin films composed of titanium and nitrogen in different ratios depending on the sputtering current. Cross section analysis by FE-SEM technique showed a compact columnar structure of the as-deposited thin films. The color of the as-deposited film was measured in CIE L*a*b* system was varied with the sputtering current. The as-deposited film which deposited from the high sputtering current, in the range of 500 - 700 mA, was close to the color of 24K gold. Keywords : thin films, titanium nitride, reactive sputtering, magnetron sputtering, sputtering current

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