Substrate dependence of the self-heating in lead zirconate titanate (PZT) MEMS actuators

Yiwen Song,Kyuhwe Kang,Pannawit Tipsawat,Christopher Y. Cheng,Wanlin Zhu,Michael LaBella,Sukwon Choi,Susan E. Trolier-McKinstry
DOI: https://doi.org/10.1063/5.0204385
IF: 2.877
2024-04-23
Journal of Applied Physics
Abstract:Lead zirconate titanate (PZT) thin films offer advantages in microelectromechanical systems (MEMSs) including large motion, lower drive voltage, and high energy densities. Depending on the application, different substrates are sometimes required. Self-heating occurs in the PZT MEMS due to the energy loss from domain wall motion, which can degrade the device performance and reliability. In this work, the self-heating of PZT thin films on Si and glass and a film released from a substrate were investigated to understand the effect of substrates on the device temperature rise. Nano-particle assisted Raman thermometry was employed to quantify the operational temperature rise of these PZT actuators. The results were validated using a finite element thermal model, where the volumetric heat generation was experimentally determined from the hysteresis loss. While the volumetric heat generation of the PZT films on different substrates was similar, the PZT films on the Si substrate showed a minimal temperature rise due to the effective heat dissipation through the high thermal conductivity substrate. The temperature rise on the released structure is 6.8× higher than that on the glass substrates due to the absence of vertical heat dissipation. The experimental and modeling results show that the thin layer of residual Si remaining after etching plays a crucial role in mitigating the effect of device self-heating. The outcomes of this study suggest that high thermal conductivity passive elastic layers can be used as an effective thermal management solution for PZT-based MEMS actuators.
physics, applied
What problem does this paper attempt to address?
This paper mainly discusses the self-heating phenomenon in lead zirconate titanate (PZT) micro-electromechanical systems (MEMS) actuators and its relationship with substrate materials. PZT is widely used in MEMS due to its large displacement, low driving voltage, and high energy density. However, self-heating can lead to a decrease in device performance and reliability, especially under high electric field excitation or high-power operation. The study found that the volumetric heat generation of PZT films on Si and glass substrates is similar. However, due to the high thermal conductivity of Si substrates, heat dissipation is effective, resulting in the smallest temperature rise of PZT films on Si substrates. In contrast, the temperature rise of release structures (etched structures on the substrate) is 6.8 times higher than that of PZT films on glass substrates due to the lack of vertical heat dissipation paths. Experimental and finite element thermal models verify that a thin layer of residual Si under the PZT film after etching is crucial for mitigating the self-heating effect. The paper suggests using a high thermal conductivity passive elastic layer as a thermal management solution for PZT-based MEMS actuators to improve device thermal performance. The research findings are significant for understanding and improving the self-heating behavior and its impact on PZT-based MEMS actuators, especially in high-power applications where thermal management needs to be considered.