Abstract:Two-dimensional (2D) materials, consisting of atomically thin crystal layers bound by the van der Waals force, have attracted much interest because of their potential in diverse technologies, including electronics, optoelectronics and catalysis1–10. In particular, solution-processable 2D semiconductor (such as MoS2) nanosheets are attractive building blocks for large-area thin-film electronics. In contrast to conventional zero- and one-dimensional nanostructures (quantum dots and nanowires, respectively), which are typically plagued by surface dangling bonds and associated trapping states, 2D nanosheets have dangling-bond-free surfaces. Thin films created by stacking multiple nanosheets have atomically clean van der Waals interfaces and thus promise excellent charge transport11–15. However, preparing high-quality solution-processable 2D semiconductor nanosheets remains a challenge. For example, MoS2 nanosheets and thin films produced using lithium intercalation and exfoliation are plagued by the presence of the metallic 1T phase and poor electrical performance (mobilities of about 0.3 square centimetres per volt per second and on/off ratios of less than 10)2,12, and materials produced by liquid exfoliation exhibit an intrinsically broad thickness distribution, which leads to poor film quality and unsatisfactory thin-film electrical performance (mobilities of about 0.4 square centimetres per volt per second and on/off ratios of about 100)14,16,17. Here we report a general approach to preparing highly uniform, solution-processable, phase-pure semiconducting nanosheets, which involves the electrochemical intercalation of quaternary ammonium molecules (such as tetraheptylammonium bromide) into 2D crystals, followed by a mild sonication and exfoliation process. By precisely controlling the intercalation chemistry, we obtained phase-pure, semiconducting 2H-MoS2 nanosheets with a narrow thickness distribution. These nanosheets were then further processed into high-performance thin-film transistors, with room-temperature mobilities of about 10 square centimetres per volt per second and on/off ratios of 106 that greatly exceed those obtained for previous solution-processed MoS2 thin-film transistors. The scalable fabrication of large-area arrays of thin-film transistors enabled the construction of functional logic gates and computational circuits, including an inverter, NAND, NOR, AND and XOR gates, and a logic half-adder. We also applied our approach to other 2D materials, including WSe2, Bi2Se3, NbSe2, In2Se3, Sb2Te3 and black phosphorus, demonstrating its potential for generating versatile solution-processable 2D materials.

Chemical-vapor-deposited 2D VSe 2 nanosheet with threshold switching behaviors for Boolean logic calculations and leaky integrate-and-fire functions

Phase transition induced threshold resistive switching in two-dimensional VTe2 nanosheets for Boolean logic operations

Structural Phase Transition of Multilayer VSe2.

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Controllable digital and analog resistive switching behavior of 2D layered WSe 2 nanosheets for neuromorphic computing

Observation of nonvolatile resistive switching behaviors in 2D layered InSe nanosheets through controllable oxidation

One‐Step Van der Waals Integration of Multi‐Threshold 2D Functional Circuits

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.

A synaptic memristor based on two-dimensional layered WSe 2 nanosheets with short- and long-term plasticity

Bi 2 O 2 Se-Based Memristor-Aided Logic

Phase Transition of single-layer vanadium diselenide on Au(111) with distinguished electronic structures

Solution-processable 2D semiconductors for high-performance large-area electronics

2D Reconfigurable van der Waals Heterojunction for Logic Gate Circuits and Wide-Spectrum Photodetectors via Sulfur Substitution and Band Matching

Two-dimensional growth of Cu-based materials with a nonvolatile resistive switching behavior

Ultrafast Triggering of Insulator–Metal Transition in Two-Dimensional VSe 2

Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets

Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functions

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

Phase-switchable Preparation of Solution-Processable WS2 Mono- or Bilayers

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Analog and Logic Circuits Fabricated on a Wafer-Scale Two-Dimensional Semiconductor