Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

Bi 2 O 2 Se-Based Memristor-Aided Logic

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Biomaterial/Organic Heterojunction Based Memristor for Logic Gate Circuit Design, Data Encryption, and Image Reconstruction

Easily Cascaded Memristor-CMOS Hybrid Circuit for High-Efficiency Boolean Logic Implementation

Ultrafast and Low-Power 2D Bi 2 O 2 Se Memristors for Neuromorphic Computing Applications

Logic-in-memory based on an atomically thin semiconductor

Stateful Logic Operation of Gated Silicon Diodes for In‐Memory Computing

2D Bi-doped SnSe Ferroelectric Memristor Integrating All-in-One Sensing-Memory-Computing

Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi2O2Se‐Based Three‐Terminal Memristor

Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2<…

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Truly concomitant and independently expressed short- and long-term plasticity in Bi2O2Se-based three-terminal memristor

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications

Efficient 16 Boolean Logic and Arithmetic Based on Bipolar Oxide Memristors

Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In‐Memory Computing

Mechano-Driven Logic-in-Memory with Neuromorphic Triboelectric Charge-Trapping Transistor

Design of memristor-based combinational logic circuits

Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe 2 for In‐Memory Computing

Progress on Memristor-Based Analog Logic Operation