Abstract:Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidants in the CMP slurry control the surface oxidation efficiency, while the polishing mechanical force comes from the abrasive particles in the CMP slurry and the pad asperity, which is attributed to the unique pad structure and diamond conditioning. To date, to obtain a high-quality as-CMP SiC wafer, the material removal rate (MRR) of SiC is only a few micrometers per hour, which leads to significantly high operation costs. In comparison, conventional Si CMP has the MRR of a few micrometers per minute. To increase the MRR, improving the oxidation efficiency of SiC is essential. The higher oxidation efficiency enables the higher mechanical forces, leading to a higher MRR with better surface quality. However, the disparity on the Si-face and C-face surfaces of 4H- or 6H-SiC wafers greatly increases the CMP design complexity. On the other hand, integrating hybrid energies into the CMP system has proven to be an effective approach to enhance oxidation efficiency. In this review paper, the SiC wafering steps and their purposes are discussed. A comparison among the three configurations of SiC CMP currently used in the industry is made. Moreover, recent advances in CMP and hybrid CMP technologies, such as Tribo-CMP, electro-CMP (ECMP), Fenton-ECMP, ultrasonic-ECMP, photocatalytic CMP (PCMP), sulfate-PCMP, gas-PCMP and Fenton-PCMP are reviewed, with emphasis on their oxidation behaviors and polishing performance. Finally, we raise the importance of post-CMP cleaning and make a summary of the various SiC CMP technologies discussed in this work.

Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Optimization and Mechanism of SiO2-Based Slurry Components for Atomically Smooth Gallium Nitride Surface Obtained Using Chemical Mechanical Polishing Techniques

Chemical Mechanical Planarization (cmp) of On-Axis Si-Face Sic Wafer Using Catalyst Nanoparticles in Slurry

Investigation on the Surface Characterization of Ga-faced GaN after Chemical-Mechanical Polishing

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

A Study of Surface Defects of GaN During CMP Process

Chemical mechanical polishing for sapphire wafers using a developed slurry

Electrochemical mechanical polishing of 4H-SiC (0001) with different grinding stones

Chemical Mechanical Polishing for Monocrystal SiC Assisted by the Heterogeneous Sono-Fenton Oxidation

Preparation of Composite Spherical Alumina Nanoparticles and Study on their CMP Performance

Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S2O82−-Fe2+ based slurry

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Preparation of Γ‐alumina/silica Core–shell Abrasives and Their Chemical Mechanical Polishing Performances on Sapphire Substrates

Nanomaterials and Equipment for Chemical-Mechanical Polishing of Single-Crystal Sapphire Wafers

Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives