Abstract:Chemical mechanical polishing/planarization (CMP) is an essential manufacturing process in semiconductor technologies. This method combines chemical and mechanical forces to smooth the surfaces of wafers. The effectiveness of CMP relies on a carefully chosen slurry, demanding a sophisticated manufacturing technology. This technology must seamlessly integrate both chemical composition and mechanical elements, highlighting the intricate synergy required for successful semiconductor fabrication. Particularly in milling processes, if agglomerated particles due to slurry particle corrosion are present during polishing, uneven polishing, numerous fine scratches occur, leading to an increase in roughness and a deterioration in the quality of the finished surface. In this study, to overcome the issue of particle agglomeration and uneven polishing in commonly used ceria nanoparticle slurries during CMP processes, we investigated the ceria nanoparticle behavior based on styrene–maleic acid (SMA) dispersant polymer applied with three types of defoaming polymers. The investigations are expected to open up the possibility of utilizing ceria nanoparticles with applied defoaming polymer as an abrasive for advanced CMP applications. All samples were characterized by DLS (dynamic light scattering), SEM-EDX (scanning electron microscopy–energy dispersive X-ray spectroscopy), pH, conductivity, viscosity, a 10-day stability test at 60 °C, the AF4 test, and the polishing rate efficiency test. Our research demonstrates a significant improvement achieved through the use of SMA dispersant polymer, resulting in a polishing selection ratio exceeding 80 for oxide and nitride films. The G-336 defoaming polymer utilized here is expected to serve as a viable alternative in CMP processes by providing stable uniformity.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Chemical effect on the material removal rate in the CMP of silicon wafers

CMP 공정에서 슬러리와 웨이퍼 형상이 SiC 웨이퍼 표면품질에 미치는 영향

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Chemical mechanical polishing of silicon wafers using developed uniformly dispersed colloidal silica in slurry

Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive

Chemical Mechanical Planarization (cmp) of On-Axis Si-Face Sic Wafer Using Catalyst Nanoparticles in Slurry

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Electrochemical mechanical polishing of 4H-SiC (0001) with different grinding stones

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Effect of cations on the improvement of material removal rate of silicon wafer in chemical mechanical polishing

Study on electrochemical mechanical polishing process of silicon carbide crystal

Polishing single-crystal silicon carbide with porous structure diamond and graphene-TiO2 slurries

Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry

Characterization of Ceria Nanoparticles as Abrasives Applied with Defoaming Polymers for CMP (Chemical Mechanical Polishing) Applications

Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis