Abstract:Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected.

Electrochemical mechanical polishing of 4H-SiC (0001) with different grinding stones

Selective electrochemical mechanical polishing of 4H–SiC surface employing porous material impregnated with electrolyte

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Charge Utilization Efficiency and Side Reactions in the Electrochemical Mechanical Polishing of 4H-SiC (0001)

A Review on Precision Polishing Technology of Single-Crystal SiC

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Study on electrochemical mechanical polishing process of silicon carbide crystal

Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Chemical Mechanical Polishing of 4H-SiC Wafer with UV-LED Light

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Chemical Mechanical Polishing (CMP) of SiC Wafer Using Photo-Catalyst Incorporated Pad

Chemical Mechanical Polishing for Monocrystal SiC Assisted by the Heterogeneous Sono-Fenton Oxidation

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

A general strategy for polishing SiC wafers to atomic smoothness with arbitrary facets

Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

Picosecond Laser-Assisted Chemical Mechanical Polishing (CMP): Aiming at the Si-Face of Single-Crystal 6H-Sic Wafer