Abstract:Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer depth resolution (low energy muon spin rotation spectroscopy (LE-$\mu$SR). In this work, we leverage the capabilities of LE-$\mu$SR to perform an investigation of the SiO$_\text{2}$-SiC interface. Thermally oxidized samples are investigated before and after annealing in nitric oxide (NO) and argon (Ar) ambience. Thermal oxidation is found to result in structural changes both in the SiC crystal close to the interface and at the interface itself. Annealing in NO environment is known to passivate the defects leading to a reduction of the density of interface traps (D$_{it}$); LE-$\mu$SR further reveals that the NO annealing results in a thin layer of high carrier concentration in SiC, extending to more than 50 nm depending on the annealing conditions. We also see indications of Si vacancy (V$_{Si}$) formation in SiC after thermal oxidation. Following NO annealing, nitrogen occupies the V$_{Si}$ sites, leading to the reduction in D$_{it}$ and at the same time, creating a charge-carrier-rich region near the interface. By comparing the LE-$\mu$SR data from a sample with known doping density, we perform a high-resolution quantification of the free carrier concentration near the interface after NO annealing and discuss the origin of observed near-surface variations. Finally, the depletion of carriers in a MOS capacitor in the region below the interface is shown using LE-$\mu$SR. The NO annealed sample shows the narrowest depletion region, likely due to the reduced D$_{it}$ and charge-carrier-rich region near the interface. Our findings demonstrate the many benefits of utilizing LE-$\mu$SR to study critical regions of semiconductor devices that have been inaccessible with other techniques while retaining nanoscale depth resolution and a non-destructive approach.

Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps

Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps

Influence of vacuum annealing on interface properties of SiC (0001) MOS structures

Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study

The Correlation Between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

Annealing Influence on Stoichiometry and Band Alignment of 4H-SiC/SiO2 Interface Evaluated by X-ray Photoelectron Spectroscopy

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Effect of nitrogen introduced at the SiC/SiO$_2$ interface and SiC side on the electronic states by first-principles calculation

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices

Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS

Effects of Initial Nitridation on the Characteristics of Sic-Sio2 Interfaces

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface

Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO/sub 2/-Sic Structures

Investigation of the SiO2-SiC interface using low energy muon spin rotation spectroscopy

Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations